Abstract
Silicon single crystals for semiconductor device applications are usually produced in the form of slices, with a diameter in the range 5 – 15 cm and thickness in the range 0.02 – 0.06 cm. The slice is then characterized by two major surfaces — the front and back. These surfaces have very different mechanical finishing: the front is mirror finished with extremely low roughness (peak-to-peak average distance below 30 Å), while the back is usually strongly damaged; the reasons for this finishing will become clear in the following section.
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References
H. Strack, K.R. Mayer, B.O. Kolbesen: Solid State Electron. 22, 135 (1979)
J.M. Bishman, S.E. Haszko, R.B. Marcus, S.P. Murarka, T.T. Sheng: J. Appl. Phys. 50, 2689 (1979)
S.P. Murarka, T.E. Seidel, J.V. Balton, J.M. Bishman, M.H. Read: 156th Meeting Electrochem. Soc. (1979), Abs. No. 489
H.R. Huff, F. Shimura: SEMI Symp. Low Temperature Processing for VLSI Large Biameter Wafers (1984)
Y. Kondo: In Semiconductor Silicon 1977, ed. by H.R. Huff, R.J. Kriegler, Y. Takeishi: (The Electrochem. Soc., Pennington NJ 1981) p. 220
S. Prussin, S.P. Li, R.H. Cockrum: J. Appl. Phys. 48, 4613 (1977)
G.A. Rozgonyi, P.M. Petroff, M.H. Read: J. Electrochem. Soc. 122, 1725 (1975)
P.M. Petroff, G.A. Rozgonyi, T.T. Sheng: J. Electrochem. Soc. 122, 565 (1975)
S.P. Murarka: J. Appl. Phys. 48, 5020 (1978)
F. Shimura, R.A. Craven: In The Physics of VLSI, ed. by J.C. Knights (Am. Inst. Phys., New York 1984) p. 205
T.Y. Tan, E.E. Gardner, W.K. Tice: Appl. Phys. Lett. 30, 175 (1977)
K. Nagasawa, Y. Matsushita, S. Kishino: Appl Phys. Lett. 37, 622 (1980)
K. Yamamoto, S. Kishino, Y. Matsushita, T. Izuka: Appl. Phys. Lett. 36, 195 (1980)
H.H. Busta, H.A. Waggener: J. Appl. Phys. 48, 4385 (1977)
H.H. Busta, H.A. Waggener: J. Electrochem. Soc. 124, 1424 (1977)
R.L. Meek, T.E. Seidel: J. Phys. Chem. Solids 36, 731 (1975)
A. Goetzberger, W. Shockley: J. Appl. Phys. 31, 1821 (1960)
L. Baldi, G.F. Cerofolini, G. Ferla, G. Frigerio: Phys. Status Solidi (a) 48, 523 (1978)
L. Baldi, G.F. Cerofolini, G. Ferla: 154th Meeting Electrochem. Soc. (1978) abs. 209
L. Baldi, G.F. Cerofolini, G. Ferla: J. Electrochem. Soc. 127, 125 (1980)
G.F. Cerofolini, G. Ferla: In Semiconductor Silicon 1981, ed. by H.R. Huff, R.J. Kriegler, Y. Takeishi (The Electrochem. Soc., Pennington NJ 1981) p. 724
G.F. Cerofolini, MX. Polignano: J. Appl. Phys. 55, 579 (1984)
P. Cappelletti, G.F. Cerofolini, M.L. Polignano: J. Appl. Phys. 57, 1406 (1985)
G.F. Cerofolini, G. Ferla: 156th Meeting Electrochem. Soc. (1979) abs. 492
L. Baldi, G.F. Cerofolini, G. Ferla: Surf. Technol. 8, 161 (1979)
W.F. Tseng, T. Koji, J.W Mayer, T.E. Seidel: Appl. Phys. Lett. 33, 442 (1978)
G.F. Cerofolini, M.L. Polignano, H. Bender, C. Claeys: Phys. Status Solidi (a) 103, 643 (1987)
G.B. Bronner, J. Plummer: 166th Meeting Electrochem. Soc. (1984) abs. 483
R.J. Falster, D.N. Modlin, W.A. Tiller, J.F. Gibbons: J. Appl. Phys. 57, 554 (1985)
R. Falster: Appl. Phys. Lett. 46, 737 (1985)
G.B. Bronner, J.D. Plummer: J. Appl. Phys. 61, 5286 (1987)
U. Gösele, W. Frank, A. Seeger: Appl. Phys. A 23, 361 (1980)
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© 1989 Springer-Verlag Berlin Heidelberg
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Cerofolini, G., Meda, L. (1989). Gettering. In: Physical Chemistry of, in and on Silicon. Springer Series in Materials Science, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-73504-2_9
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DOI: https://doi.org/10.1007/978-3-642-73504-2_9
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