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Dopants

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Physical Chemistry of, in and on Silicon

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 8))

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Abstract

Group III and group V impurities play a fundamental role in the electronic, equilibrium and transport properties of silicon and are usually referred to as dopants. Dopants are defined as acceptors or donors when they belong to group III or V, respectively. The properties of doped silicon are usually considered in the framework of a relatively simple theory — the standard theory of shallow dopants (STSD).

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Authors and Affiliations

  1. EniChem, Via Medici del Vascello 26, I-20138, Milano MI, Italy

    Dr. Gianfranco Cerofolini

  2. SGS-Thomson Microelectronics, I-20041, Agrate MI, Italy

    Dr. Laura Meda

Authors
  1. Dr. Gianfranco Cerofolini
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  2. Dr. Laura Meda
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© 1989 Springer-Verlag Berlin Heidelberg

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Cerofolini, G., Meda, L. (1989). Dopants. In: Physical Chemistry of, in and on Silicon. Springer Series in Materials Science, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-73504-2_5

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  • DOI: https://doi.org/10.1007/978-3-642-73504-2_5

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-73506-6

  • Online ISBN: 978-3-642-73504-2

  • eBook Packages: Springer Book Archive

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