Chemisorption Geometry of Molybdenum on Silicon Surfaces
Silicide growth at transition metal-silicon interfaces has attracted broad interest because of the promising applications of silicides in the production of electronic devices /1–3/. It has been shown that the initial stage of deposition of metals on silicon surfaces affects the growth and properties of silicides; therefore, a great deal of work has been done to investigate the initial interactions at the interface. The interfaces of silicon and noble metals /1/ or near-noble metals /2,3/ have been widely studied. As for the refractory metal-silicon interfaces there exists only a limited number of work related to the Mo-Si and Mo silicide. From the photoemission spectra of Mo/Si(111) system it has been shown that the intermixing of Mo and Si takes place in the interfacial region /4/. More recently, however, the experiment made by BALASKA et al. /5/ using LEED, UPS and Auger spectroscopies has shown that the Mo-Si interface should be abrupt at room temperature. Furthermore, the electronic states of MoSi2 have been studied both theoretically /6/ and experimentally /7/.
KeywordsSilicon Surface Bonding State Bridge Site Hollow Site Total Binding Energy
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