Chemisorption Geometry of Molybdenum on Silicon Surfaces

  • Tang Shaoping
  • Zhang Kaiming
  • Xie Xide
Conference paper
Part of the Springer Series in Surface Sciences book series (SSSUR, volume 11)


Silicide growth at transition metal-silicon interfaces has attracted broad interest because of the promising applications of silicides in the production of electronic devices /1–3/. It has been shown that the initial stage of deposition of metals on silicon surfaces affects the growth and properties of silicides; therefore, a great deal of work has been done to investigate the initial interactions at the interface. The interfaces of silicon and noble metals /1/ or near-noble metals /2,3/ have been widely studied. As for the refractory metal-silicon interfaces there exists only a limited number of work related to the Mo-Si and Mo silicide. From the photoemission spectra of Mo/Si(111) system it has been shown that the intermixing of Mo and Si takes place in the interfacial region /4/. More recently, however, the experiment made by BALASKA et al. /5/ using LEED, UPS and Auger spectroscopies has shown that the Mo-Si interface should be abrupt at room temperature. Furthermore, the electronic states of MoSi2 have been studied both theoretically /6/ and experimentally /7/.


Silicon Surface Bonding State Bridge Site Hollow Site Total Binding Energy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    S.A. Chambers, S.B. Anderson and J.H. Weaver, Phys. Rev. B32, 581 (1985).Google Scholar
  2. 2.
    G.W. Rubloff, P.S. Ho and J.E. Lewis, Phys. Rev. B23. 22 (1981).Google Scholar
  3. 3.
    O. Bisi, L.W. Chiao and K.N. Tu, Phys. Rev. B30, 4664 (1984).Google Scholar
  4. 4.
    G. Rossi, I. Abbati, L. Braicovich, I. Lindau, W.E. Spicer, U. Del Pennino and S. Nannarone, Physica 117B & 118B., 795 (1983).Google Scholar
  5. 5.
    H. Balaska, R.C. Cinti, T.T.A. Nguyen and J. Derrien, Surf. Sci. 168, 225 (1986).CrossRefGoogle Scholar
  6. 6.
    B.K. Bhattacharyya, D.M. Bylander, and L. Kleinman, Phys. Rev. B32, 7973 (1985).Google Scholar
  7. 7.
    J.H. Weaver, V.L. Moruzzi and FA Schmidt, Phys. Rev. B23. 2916 (1981).Google Scholar
  8. 8.
    Tian Zengju, Zhang Kaiming, Ve Ling and Xie Xide, Chinese J. of Semiconductors 8, 261 (1987).Google Scholar
  9. 9.
    D.E. Ellis and G.S. Painter, Phys. Rev. B2. 2887 (1970).Google Scholar
  10. 10.
    B. Deily and D. E. Ellis. J. Chem. Phys. 76, 1949 (1982).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1988

Authors and Affiliations

  • Tang Shaoping
    • 1
  • Zhang Kaiming
    • 1
  • Xie Xide
    • 1
  1. 1.The Institute of Modern PhysicsFudan UniversityShanghaiPeople’s Republic of China

Personalised recommendations