Abstract
Several experiments [1-4] strongly support the “dimer adatom stacking-fault” (OAS) model of TAKAYANAGI et al.[1] as being the correct structural model for the Si 7×7. Attention is now shifting towards attempts to understand the reasons for the formation of this structure. McRAE [5] has suggested that relief of a strong compressive surface stress [6] is the driving force for the reconstruction. QIAN and CHAOI [7] and NORTHRUP [8] have emohasized danglinqbond reduction and adatom formation as the driving mechanisms. A successful theory should discriminate among these possibilities, identify the factors which determine the DAS periodicity, elucidate the relationship of the Si 7×7 to the Gé c2×8, and explain experiments showing a strain-dependence of the surface reconstruction pattern [9-13].
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
K. Takayanagi, Y. Tanishiro, M. Takahashi, S. Takahashi: J. Vac. Sci. Technol. A3, 1502 (1985); Surf. Sci. 164,367 (1985)
R. S. Becker, J. A. Golovchenko, E. G. McRae, B. S. Swartzentruber: Phys. Rev. Lett. 55, 2028 (1985)
R. M. Tromp, E. J. van Loenen: Surf. Sci. 155, 441 (1985)
R.J. Hamers, R. M. Tromp, J. E. Demuth: Phys. Rev. Lett. 56, 1972 (1986)
E. G. McRae: Phys. Rev. B28, 2305 (1983); Surf. Sci. 147,663 (1984); Surf. Sci. 163, L766 (1985)
E. Pearson, T. Takai, T. Halicioglu, W. A. Tiller: J. Cryst. Growth 70, 33 (1984)
G.-X. Qian, D. J. Chadi: J. Vac. Sci. Technol.B4,1079 (1986); Phys. Rev. B35, 1288(1987)
J. E. Northrup: Phys. Rev. Lett. 57, 154 (1986); and in Proceedings of the 18th International Conference on the Physics of Semiconductors, edited by O. Engström (World Scientific, Singapore, 1987), p. 61
H.-J. Gossman, J. C. Bean, L. C. Feldman, E. G. McRae, J. K. Robinson: Phys. Rev. Lett. 55, 1106 (1985)
A. Ourmazd, D.W. Taylor, J. Bevk, B. A. Davidson, L. C. Feldman, J. P. Mannaerts: Phys. Rev. Lett. 21 1332 (1986)
T. Ichikawa, S. Ino: Surf. Sci. 105., 395 (1981); and 136, 267 (1984)
H.-J. Gossman, L. C. Feldman: Surf. Sci. 155, 413 (1985)
K. Nakagawa, P. M. J. Marée, J. F. van der Veen: In Proceedings of the 18th International Conference on the Physics of Semiconductors, edited by O. Engström (World Scientific, Singapore, 1987), p. 93
D. Vanderbilt: submitted to Phys. Rev. B
Precisely speaking, the parameters d, c, and Δf are to be defined by the large-n limit of (1)
K. Takayanagi, Y. Tanishiro: Phys. Rev. B34, 1034 (1986)
D. Vanderbilt: in preparation
I. K. Robinson, W.K. Waskiewicz, P. H. Fuoss, L. J. Norton: to be published
R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber: Phys. Rev. Lett. 54, 2678 (1985)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1988 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Vanderbilt, D. (1988). Understanding the Si 7x 7: Energetics, Topology, and Stress. In: van der Veen, J.F., Van Hove, M.A. (eds) The Structure of Surfaces II. Springer Series in Surface Sciences , vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-73343-7_46
Download citation
DOI: https://doi.org/10.1007/978-3-642-73343-7_46
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-73345-1
Online ISBN: 978-3-642-73343-7
eBook Packages: Springer Book Archive