Understanding the Si 7x 7: Energetics, Topology, and Stress
Several experiments [1-4] strongly support the “dimer adatom stacking-fault” (OAS) model of TAKAYANAGI et al. as being the correct structural model for the Si 7×7. Attention is now shifting towards attempts to understand the reasons for the formation of this structure. McRAE  has suggested that relief of a strong compressive surface stress  is the driving force for the reconstruction. QIAN and CHAOI  and NORTHRUP  have emohasized danglinqbond reduction and adatom formation as the driving mechanisms. A successful theory should discriminate among these possibilities, identify the factors which determine the DAS periodicity, elucidate the relationship of the Si 7×7 to the Gé c2×8, and explain experiments showing a strain-dependence of the surface reconstruction pattern [9-13].
KeywordsStack Fault Energy Dangling Bond Strain Derivative Keating Model Corner Hole
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- 1.K. Takayanagi, Y. Tanishiro, M. Takahashi, S. Takahashi: J. Vac. Sci. Technol. A3, 1502 (1985); Surf. Sci. 164,367 (1985)Google Scholar
- 5.E. G. McRae: Phys. Rev. B28, 2305 (1983); Surf. Sci. 147,663 (1984); Surf. Sci. 163, L766 (1985)Google Scholar
- 7.G.-X. Qian, D. J. Chadi: J. Vac. Sci. Technol.B4,1079 (1986); Phys. Rev. B35, 1288(1987)Google Scholar
- 13.K. Nakagawa, P. M. J. Marée, J. F. van der Veen: In Proceedings of the 18th International Conference on the Physics of Semiconductors, edited by O. Engström (World Scientific, Singapore, 1987), p. 93Google Scholar
- 14.D. Vanderbilt: submitted to Phys. Rev. BGoogle Scholar
- 15.Precisely speaking, the parameters d, c, and Δf are to be defined by the large-n limit of (1)Google Scholar
- 16.K. Takayanagi, Y. Tanishiro: Phys. Rev. B34, 1034 (1986)Google Scholar
- 17.D. Vanderbilt: in preparationGoogle Scholar
- 18.I. K. Robinson, W.K. Waskiewicz, P. H. Fuoss, L. J. Norton: to be publishedGoogle Scholar