Detection of 10 μm Infrared Radiation via Intersubband Absorption in Doped GaAs Quantum Wells

  • B. F. Levine
  • K. K. Choi
  • C. G. Bethea
  • J. Walker
  • R. J. Malik
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 24)

Abstract

A new type of long wavelength detector is demonstrated. It is based on intersubband absorption in a superlattice of doped GaAs/Al xGa1-xAs quantum wells. The photoexcited electron, which is promoted to the first excited state of the quantum well, rapidly tunnels out and produces a photocurrent. The measured quantum efficiency is η = 6% at a wavelength of λ = 10.8 μm.

Keywords

GaAs 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • B. F. Levine
    • 1
  • K. K. Choi
    • 1
  • C. G. Bethea
    • 1
  • J. Walker
    • 1
  • R. J. Malik
    • 1
  1. 1.AT&T Bell LaboratoriesMurray HillUSA

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