Detection of 10 μm Infrared Radiation via Intersubband Absorption in Doped GaAs Quantum Wells
A new type of long wavelength detector is demonstrated. It is based on intersubband absorption in a superlattice of doped GaAs/Al xGa1-xAs quantum wells. The photoexcited electron, which is promoted to the first excited state of the quantum well, rapidly tunnels out and produces a photocurrent. The measured quantum efficiency is η = 6% at a wavelength of λ = 10.8 μm.
KeywordsFree Path Bias Voltage Resonant Tunneling Energy Band Diagram Applied Bias Voltage
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