Fast GaAs Photoconductive Detectors with High Sensitivity Integrated in Coplanar Systems onto GaAs Substrates

  • H. Schumacher
  • U. Salz
  • H. Beneking
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 24)


Since its introduction in 1975 /1,2/, high-speed sampling of voltage transients on transmission lines using photoconductive switches has been of great interest. Besides superior equivalent bandwidth, it offers a dynamic range considerably larger than conventional sampling oscilloscopes, and complete isolation between the transmission line under test and the sampling circuit. Despite these advantages, it has never found widespread use outside the research area, mainly due to the costly ps dye lasers required. A sampling system using a semiconductor laser would resolve this problem, provided it has a temporal resolution equal or superior to conventional sampling oscilloscopes (≤25 ps). Besides the generation of ps pulses with semiconductor lasers /3/, which will not be discussed here, a photoconductive gate with a carrier lifetime ≤10 ps is necessary, yet sensitive enough to efficiently sample when controlled by pJ pulses from a laser diode.


Transmission Line Semiconductor Laser GaAs Substrate Carrier Lifetime Dark Conductance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    Auston, D. H., Picosecond optoelectronic switching and gating in silicon; Appl. Phys. Lett. 26 (1975), pp. 101.CrossRefADSGoogle Scholar
  2. [2]
    Lawton, R. A., and Andrews, J. R., Pulsed-laser application to sampling oscilloscope; Electron. Lett. 11 (1975), pp. 138.CrossRefGoogle Scholar
  3. [3]
    Scholl, E., Bimberg, D., Schumacher, H., and Landsberg, P. T., Kinetics of picosecond pulse generation in semiconductor lasers with bimolecular recombination at high current injection; IEEE Journ. Quantum Electron. QE-20 (1984), pp. 394.CrossRefADSGoogle Scholar
  4. [4]
    Hasnain, G., Dienes, A., and Whinnery, J. R., Dispersion of picosecond pulses in coplanar transmission lines; IEEE Trans. Microwave Theory Tech. 738 (1986), pp. 738.CrossRefADSGoogle Scholar
  5. [5]
    Smith, P. R., Auston, D. H., and Augustyniak, W. M., Picosecond photoconductivity in radiation-damaged silicon-on- sapphire films; Appl. Phys. Lett. 738 (1981), pp. 47.CrossRefADSGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • H. Schumacher
    • 1
  • U. Salz
    • 1
  • H. Beneking
    • 1
  1. 1.Institute of Semiconductor Electronics AachenUniversity of TechnologyAachenFed. Rep. of Germany

Personalised recommendations