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Picosecond Electronics and Optoelectronics II pp 181–183Cite as

Modulation Efficiency Limited High Frequency Performance of the MODFET

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Part of the book series: Springer Series in Electronics and Photonics ((SSEP,volume 24))

Abstract

Epilayer design for the modulation doped field-effect transistor (MODFET) is frequently performed using the depletion approximation [1,2]. The work of authors such as GRAY and LUNDSTROM [3], STERN and DAS SARMA [4], and PONSE et al. [5] have provided tools by which electron distributions and capacitances can be calculated without this assumption. Their results demonstrate that for two-dimensional electron gas (2DEG) sheet densities significantly below the saturation value, free and bound electrons are present in the electron supplying layer. Because these electrons must be modulated with the 2DEG electrons, the gate capacitance is increased while the transcon- ductance is decreased [6]. The unity current gain frequency, fT, is thus decreased.

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Author information

Authors and Affiliations

  1. School of Electrical Engineering, Cornell University, Phillips Hall, Ithaca, NY, 14853, USA

    M. C. Foisy, J. C. Huang, P. J. Tasker & L. F. Eastman

  2. National Research and Resource Facility of Submicron Structures, Cornell University, Phillips Hall, Ithaca, NY, 14853, USA

    M. C. Foisy, J. C. Huang, P. J. Tasker & L. F. Eastman

  3. Department of Applied Physics, Cornell Univesity, USA

    J. C. Huang

Authors
  1. M. C. Foisy
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  2. J. C. Huang
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  3. P. J. Tasker
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  4. L. F. Eastman
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Editor information

Editors and Affiliations

  1. United Technologies Research Center, 06108, East Hartford, CT, USA

    Frederick John Leonberger

  2. Dept. of Electrical Engineering, University of Maryland, 20742, College Park, MD, USA

    Chi H. Lee

  3. AT&T Bell Laboratories, Room 7A-209, 600 Mountain Avenue, 07974, Murray Hill, NJ, USA

    Federico Capasso

  4. Dept. of Electrical Engineering, University of Illinois, 61801, Champaign Urbana, IL, USA

    Hadis Morkoc

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© 1987 Springer-Verlag Berlin Heidelberg

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Foisy, M.C., Huang, J.C., Tasker, P.J., Eastman, L.F. (1987). Modulation Efficiency Limited High Frequency Performance of the MODFET. In: Leonberger, F.J., Lee, C.H., Capasso, F., Morkoc, H. (eds) Picosecond Electronics and Optoelectronics II. Springer Series in Electronics and Photonics, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72970-6_38

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  • DOI: https://doi.org/10.1007/978-3-642-72970-6_38

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-72972-0

  • Online ISBN: 978-3-642-72970-6

  • eBook Packages: Springer Book Archive

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