High-Performance Quarter-Micron-Gate MODFETs
Modulation-doped FETs (MODFETs) provide a significant performance advantage over conventional MESFETs and other extra high frequency devices used in rf applications. They have exhibited the highest gain at 94 GHz, the lowest noise figures, and the highest power-added efficiencies reported for any solid-state devices up to 60 GHz. With the advent of new, improved materials, device structures, and further reduction of transistor gate length, it is anticipated that the maximum frequency of these devices will exceed 300 GHz.
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