High-Performance Quarter-Micron-Gate MODFETs
Part of the
Springer Series in Electronics and Photonics
book series (SSEP, volume 24)
Modulation-doped FETs (MODFETs) provide a significant performance advantage over conventional MESFETs and other extra high frequency devices used in rf applications. They have exhibited the highest gain at 94 GHz, the lowest noise figures, and the highest power-added efficiencies reported for any solid-state devices up to 60 GHz. With the advent of new, improved materials, device structures, and further reduction of transistor gate length, it is anticipated that the maximum frequency of these devices will exceed 300 GHz.
KeywordsMaximum Frequency Noise Figure Device Characteristic Gate Length Output Power Density
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© Springer-Verlag Berlin Heidelberg 1987