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High-Performance Quarter-Micron-Gate MODFETs

  • J. J. Berenz
Conference paper
Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 24)

Abstract

Modulation-doped FETs (MODFETs) provide a significant performance advantage over conventional MESFETs and other extra high frequency devices used in rf applications. They have exhibited the highest gain at 94 GHz, the lowest noise figures, and the highest power-added efficiencies reported for any solid-state devices up to 60 GHz. With the advent of new, improved materials, device structures, and further reduction of transistor gate length, it is anticipated that the maximum frequency of these devices will exceed 300 GHz.

Keywords

Maximum Frequency Noise Figure Device Characteristic Gate Length Output Power Density 
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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • J. J. Berenz
    • 1
  1. 1.TRW Electronic Systems GroupRedondo BeachUSA

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