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XANES and XARS for Semiconductor Interface Studies

  • Conference paper
Semiconductor Interfaces

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 22))

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Abstract

An empirical, qualitative approach to the analysis of the X-ray near edge spectra of metal-semiconductor and semiconductor-semiconductor systems is proposed in this paper.

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References

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Author information

Authors and Affiliations

  1. Laboratoire pour l’Utilisation du Rayonnement Electromagnetique, CNRS, CEA, MEN; Université de Paris-Sud, F-91405, Orsay, France

    G. Rossi

Authors
  1. G. Rossi
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Editor information

Editors and Affiliations

  1. Campus de Luminy, C.R.M.C.2, CNRS, Case 913, F-13288, Marseille, Cedex 09, France

    Guy Le Lay

  2. L.E.P.E.S., CNRS, BP 166, F-38042, Grenoble, France

    Jacques Derrien

  3. Centre de Physique Théorique, F-74310, Les Houches, France

    Nino Boccara

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© 1987 Springer-Verlag Berlin Heidelberg

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Rossi, G. (1987). XANES and XARS for Semiconductor Interface Studies. In: Le Lay, G., Derrien, J., Boccara, N. (eds) Semiconductor Interfaces. Springer Proceedings in Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72967-6_7

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  • DOI: https://doi.org/10.1007/978-3-642-72967-6_7

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-72969-0

  • Online ISBN: 978-3-642-72967-6

  • eBook Packages: Springer Book Archive

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