Abstract
Structural information on the atomic arrangements at the early stage of formation of semiconductor interfaces and heterojunctions is needed along with the determination of the structure of the electron states in order to put on a complete experimental ground the discussion of the formation of solid junctions. Amongst the structural tools that have been applied to the interface formation problem Surface-EXAFS [1–4] is probably the best suited since the local configuration of the interface atoms can be directly measured independent from the presence of long-range order or of well-known bulk phases. We propose some comments on the applicability of SEXAFS to the interface formation problem, a brief review of the merits of the technique, an overview of selected studies from the recent literature, and a status report of the SEXAFS interface studies underway.
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Rossi, G. (1987). SEXAFS for Semiconductor Interface Studies. In: Le Lay, G., Derrien, J., Boccara, N. (eds) Semiconductor Interfaces. Springer Proceedings in Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72967-6_6
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DOI: https://doi.org/10.1007/978-3-642-72967-6_6
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