Abstract
The advent of powerful X-ray sources, rotating anode X-ray generators and Synchrotron Radiation sources, has made possible the detection of X-ray diffraction signals or of secondary effects excited by diffracted X-rays, produced in atom monolayers.
Such methods have found numerous applications in the characterization of semiconductor surfaces and interfaces and can be classified in two main groups: surface or superficial layer scattering collected in a grazing incidence geometry, with application to the determination of the atomic structure in surface unit cell, the second group is concerned with the excitation of surface or interface atoms by Bragg diffraction-induced X-ray standing waves.
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Sauvage-Simkin, M. (1987). Monolayer Sensitive X-Ray Diffraction Techniques: A Short Guided Tour Through the Literature. In: Le Lay, G., Derrien, J., Boccara, N. (eds) Semiconductor Interfaces. Springer Proceedings in Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72967-6_5
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DOI: https://doi.org/10.1007/978-3-642-72967-6_5
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