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The Physics of Metal Base Transistors

  • Conference paper
Semiconductor Interfaces

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 22))

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Abstract

Epitaxial Si/CoSi2/Si structures can be grown under ultra-high vacuum conditions. The metallic CoSi2 films can be extremely thin, typically between 1 nm and 20 nm. The electrical properties of these heterostructures are presented, mainly the transport of electrons in the metallic films parallel to the interfaces and the transfer of electrons through the metal film. The influence of pinholes in the CoSi2 layers will be discussed.

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References

  1. S. Saitoh, H. Ishiwara, S. Furukawa: Appl. Phys. Lett. 37, 203 (1980).

    Article  ADS  Google Scholar 

  2. J.C. Bean, J.M. Poate: Appl. Phys. Lett. 37, 643 (1980).

    Article  ADS  Google Scholar 

  3. A. Ishizaka, K. Nakagawa, Y. Shiraki: In Proceedings of the symposium on molecular beam epitaxy and clean surface techniques, (The Japan Society of Appl.Phys., Tokyo, 1982), p. 183.

    Google Scholar 

  4. F. Arnaud d’Avitaya, S. Delage, E. Rosencher, J. Derrien: J. Vac. Sci. Technol. B3, 770 (1985).

    Google Scholar 

  5. E. Rosencher, S. Delage, F. Arnaud d’Avitaya: J. Vac. Sci. Technol. B3, 762 (1985).

    Google Scholar 

  6. K. Ishibashi, S. Furukawa: Appl. Phys. Lett. 43, 660 (1983).

    Article  ADS  Google Scholar 

  7. B.D. Hunt, N. Lewis, E.L. Hall, L.G. Turner, L.S. Schowalter, M. Okamoto, S. Hashimoto: In Proceedings of the MRS Conference, 37,“Layer Structures, Epitaxy and Interfaces”, Ed. J.M. Gibson and L.R. Dawson, p. 131.

    Google Scholar 

  8. C. d’Anterroches, F. Arnaud d’Avitaya: Thin Solid Films 137, 351 (1986).

    Article  Google Scholar 

  9. E. Rosencher, P.A. Badoz, C. d’Anterroches, G. Glastre, G. Vincent, F. Arnaud d’Avitaya (to be published).

    Google Scholar 

  10. R.T. Tung, A.F.J. Levi, 3.M. Gibson: Appl. Phys. Lett. 48, 635 (1986).

    Article  ADS  Google Scholar 

  11. F. Arnaud d’Avitaya, J. A. Chroboczek, G. Glastre, Y. Campidelli, E. Rosencher: 3. of Crystal Growth (to be published).

    Google Scholar 

  12. J.C. Hensel, R.T. Tung, J.M. Poate, F.C. Unterwald: Phys. Rev. Lett. 54, 1840 (1985).

    Article  ADS  Google Scholar 

  13. P.A. Badoz, A. Briggs, E. Rosencher, F. Arnaud d’Avitaya (to be published).

    Google Scholar 

  14. R. Madar, A. Briggs (to be published).

    Google Scholar 

  15. E. Rosencher, P.A. Badoz, A. Briggs, Y. Campidelli, F. Arnaud d’Avitaya: In Proceedings of the first international symposium of silicon molecular beam epitaxy, ed. J.C. Bean, The Electrochemical Society, Vol. 85–7, p. 268 (1985).

    Google Scholar 

  16. E. Rosencher, S. Delage, Y. Campidelli, F. Arriaud d’Avitaya: Electron. Letters 20, 762 (1984).

    Article  ADS  Google Scholar 

  17. E. Rosencher, S. Delage, F. Arnaud d’Avitaya, C. d’Anterroches, K. Belhaddad, J.C. Pfister: Physica B134, 106 (1985).

    Google Scholar 

  18. J.C. Hensel, A.F. Levi, R.T. Tung, J.M. Gibson: Appl. Phys. Lett. 47, 151 (1985). See also Ref. 10.

    Article  ADS  Google Scholar 

  19. E. Rosencher, P.A. Badoz, J.C. Pfister, F. Arnaud d’Avitaya, G. Vincent, S. Delage: Appl. Phys. Lett. 49, 271 (1986).

    Article  ADS  Google Scholar 

  20. J.C. Pfister, E. Rosencher, K. Belhaddad, A. Poncet: Solid State Electron. 29, 907 (1986).

    Article  ADS  Google Scholar 

  21. S.M. Sze: In Physics of Semiconductor Devices, (Wiley-Interscience, New York, 1969) Chap. 11.

    Google Scholar 

  22. P.A. Badoz, E. Rosencher, S. Delage, G. Vincent, F. Arnaud d’Avitaya: In Proceedings of the 18th International Conference of Physics of Semiconductors (1986, Stockholm) (to be published).

    Google Scholar 

  23. A. Marty, J. Clarac, J.P. Bailbe, G. Rey: IEE Proc. 130, 24 (1983).

    Google Scholar 

  24. J. Lindmayer: Proc. IEEE, 1751 (1964).

    Google Scholar 

  25. C.O. Bozler, G.D. Alley: IEEE Trans. Electron Devices 27, 1128 (1980).

    Article  ADS  Google Scholar 

  26. K. Ishibashi, S. Furukawa: IEEE Trans, on Electron Devices 33, 322 (1986).

    Article  ADS  Google Scholar 

  27. E. Rosencher, G. Glastre, G. Vincent, A. Vareille, F. Arnaud d’Avitaya Electron. Letters 22, 699 (1986).

    Article  Google Scholar 

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Author information

Authors and Affiliations

  1. Centre National d’Etudes des Télécommunications, B.P. 98, Chemin du Vieux Chêne, F-38243, Meylan Cedex, France

    E. Rosencher, F. Arnaud d’Avitaya, P. A. Badoz, C. d’Anterroches, G. Glastre, G. Vincent & J. C. Pfister

Authors
  1. E. Rosencher
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  2. F. Arnaud d’Avitaya
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  3. P. A. Badoz
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  4. C. d’Anterroches
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  5. G. Glastre
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  6. G. Vincent
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  7. J. C. Pfister
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Editor information

Editors and Affiliations

  1. Campus de Luminy, C.R.M.C.2, CNRS, Case 913, F-13288, Marseille, Cedex 09, France

    Guy Le Lay

  2. L.E.P.E.S., CNRS, BP 166, F-38042, Grenoble, France

    Jacques Derrien

  3. Centre de Physique Théorique, F-74310, Les Houches, France

    Nino Boccara

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© 1987 Springer-Verlag Berlin Heidelberg

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Rosencher, E. et al. (1987). The Physics of Metal Base Transistors. In: Le Lay, G., Derrien, J., Boccara, N. (eds) Semiconductor Interfaces. Springer Proceedings in Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72967-6_27

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  • DOI: https://doi.org/10.1007/978-3-642-72967-6_27

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-72969-0

  • Online ISBN: 978-3-642-72967-6

  • eBook Packages: Springer Book Archive

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