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The Physics of Metal Base Transistors

  • E. Rosencher
  • F. Arnaud d’Avitaya
  • P. A. Badoz
  • C. d’Anterroches
  • G. Glastre
  • G. Vincent
  • J. C. Pfister
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 22)

Abstract

Epitaxial Si/CoSi2/Si structures can be grown under ultra-high vacuum conditions. The metallic CoSi2 films can be extremely thin, typically between 1 nm and 20 nm. The electrical properties of these heterostructures are presented, mainly the transport of electrons in the metallic films parallel to the interfaces and the transfer of electrons through the metal film. The influence of pinholes in the CoSi2 layers will be discussed.

Keywords

High Resolution Transmission Electron Microscopy High Resolution Transmission Electron Microscopy Transfer Ratio Transmission Electron Microscopy Photograph Base Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • E. Rosencher
    • 1
  • F. Arnaud d’Avitaya
    • 1
  • P. A. Badoz
    • 1
  • C. d’Anterroches
    • 1
  • G. Glastre
    • 1
  • G. Vincent
    • 1
  • J. C. Pfister
    • 1
  1. 1.Centre National d’Etudes des TélécommunicationsMeylan CedexFrance

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