Abstract
Two recent developments in the spectroscopy of semiconductor interfaces are discussed: The use of various core level spectroscopies to selectively look at the interface atoms, and the application of inverse photoemission to observe unoccupied electronic states.
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Himpsel, F.J. (1987). Photoemission and Inverse Photoemission from Semiconductor Interfaces. In: Le Lay, G., Derrien, J., Boccara, N. (eds) Semiconductor Interfaces. Springer Proceedings in Physics, vol 22. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72967-6_17
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DOI: https://doi.org/10.1007/978-3-642-72967-6_17
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