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Surface and Interface Studies with MeV Ion Beams

  • C. Cohen
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 22)

Abstract

MeV ion backscattering and nuclear microanalysis are very sensitive tools which, coupled to Auger electron spectroscopy, provide quantitative information on elemental composition of solid surfaces. The channeling phenomenon enables the measurement of a few hundred’s of  displacements of atoms from lattice sites and the analysis of surface crystallographic structures, epitaxial layers and interface defects. The principles of such experiments are presented and examples are given which illustrate the possibilities of nuclear techniques in various domains related to surface physics.

Keywords

Nuclear Reaction Transverse Energy Target Atom Step Edge Nuclear Technique 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    W.K. Chu, J.W. Mayer and M.A. Nicolet: Backscattering Spectrometry, Acad. Press, New York, San Francisco, London, 1978Google Scholar
  2. 2.
    L.C. Feldman, J.W. Mayer and S.T. Picraux: Material Analysis by Ion Channeling, Acad. Press, New York, London, Paris, San Francisco, Sao Paulo, Sldney, Tokyo, Toronto, 1982Google Scholar
  3. 3.
    J.F. Van der Veen: Surface Sci. Reports, 5, 199 (1985)ADSCrossRefGoogle Scholar
  4. 4.
    G. Amsel, J.P. Nadai, E. d’Artemare, D. David, E. Girard and J. Moulin Nucl. Instrum. and Meth. 92,481 (1971)ADSCrossRefGoogle Scholar
  5. 5.
    S. Rigo, Silicon Films onSilicon, in “Instabilities in Silicon Devices” G. Barbottin and A. Vapaille editors, Elsevier SClence Publishers B.V. North Holland, p. 5, 1986Google Scholar
  6. 6.
    P. Rabinzohn, G. Gautherin, B. Agius and C. Cohen: J. Electrochem. Soc., 131,905 (1984)CrossRefGoogle Scholar
  7. 7.
    I. Stensgaard: Nucl. Instrum. and Meth., B15, 300, (1986).ADSGoogle Scholar
  8. 8.
    I. Stensgaard, L.C. Feldman and P.J. Silverman: Surf. Sci., 77, 513 (1978)ADSCrossRefGoogle Scholar
  9. 9.
    J.C. Boulliard, C. Cohen, J.L. Domange, A.V. Drigo, A. L’Hoir, J. Moulin and M. Sotto: Phys. Rev. B, 30, 2470 (1984)ADSCrossRefGoogle Scholar
  10. 10.
    R.G. Smeenk, R.M. Tromp, H.H. Kersten,A.J.H. Boerboom and F.W. Saris: Nucl. Instrum. and Meth. 195, 581, (1982)ADSCrossRefGoogle Scholar
  11. 11.
    D.P. Jackson, T.E. Jackman:-J.A. Davies, W.N. Unertl and P.R. Norton: Surf. Sci., 126,226 (1983)ADSCrossRefGoogle Scholar
  12. 12.
    P.R. Norton, A. Davies, D.P. Jackson and N. Matsunami: Surf. Sci., 85, 269 (1979)ADSCrossRefGoogle Scholar
  13. 13.
    J.W.M. Frenken and J.F. Van der Veen: Phys. Rev. Lett., 54, 134 (1985)ADSCrossRefGoogle Scholar
  14. 14.
    R. T. Tung, J.C. Bean, J.M. Poate, J.M. Gi bson and D.C. JaCObsof.: Appl. Phys. Lett. 40,684 (1982)ADSCrossRefGoogle Scholar
  15. 15.
    W.K. Chu, F.W. Saris, C.A. Chang, R. Luedke and L. Esaki: Phys. Rev. B, 26, 1999 (1982)ADSCrossRefGoogle Scholar

Copyright information

© Springer-verlag Berlin Heidelberg 1987

Authors and Affiliations

  • C. Cohen
    • 1
  1. 1.Groupe de Physique des Solides de l’E.N.SUniversité Paris VIIParis Cedex 05France

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