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Ultrafast Carrier Capture into InGaAs/GaAs Quantum Wells

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Ultrafast Phenomena XI

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 63))

Abstract

We have inverstigated the dynamics of photoexcited carriers in InGaAs/GaAs quantum wells using the photoluminescence up-conversion technique. In this study we describe the observation of an extremely fast (600fs) capture process in shallow InGaAs/GaAs quantum wells, resulting from resonant tunnelling from impurities in the GaAs barrier.

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References

  1. L.V. Dao, M. Gal, G. Li, and C. Jagadish, Appl. Phys. Lett. 71, 1849 (1997)

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Authors and Affiliations

  1. School of Physics, University of New South Wales, Sydney, 2052, Australia

    L. V. Dao, M. Gal, H. H. Tan & C. Jagadish

  2. Dept. Electr. Mat.Eng., Research School of Physical Sciences and Engineering, IAS Australian National University, Canberra, 0200, Australia

    H. H. Tan & C. Jagadish

Authors
  1. L. V. Dao
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  2. M. Gal
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  3. H. H. Tan
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  4. C. Jagadish
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© 1998 Springer-Verlag Berlin Heidelberg

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Dao, L.V., Gal, M., Tan, H.H., Jagadish, C. (1998). Ultrafast Carrier Capture into InGaAs/GaAs Quantum Wells. In: Ultrafast Phenomena XI. Springer Series in Chemical Physics, vol 63. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72289-9_90

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  • DOI: https://doi.org/10.1007/978-3-642-72289-9_90

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-72291-2

  • Online ISBN: 978-3-642-72289-9

  • eBook Packages: Springer Book Archive

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