Ultrafast Carrier Capture into InGaAs/GaAs Quantum Wells

  • L. V. Dao
  • M. Gal
  • H. H. Tan
  • C. Jagadish
Conference paper
Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 63)

Abstract

We have inverstigated the dynamics of photoexcited carriers in InGaAs/GaAs quantum wells using the photoluminescence up-conversion technique. In this study we describe the observation of an extremely fast (600fs) capture process in shallow InGaAs/GaAs quantum wells, resulting from resonant tunnelling from impurities in the GaAs barrier.

Keywords

GaAs Sapphire 

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References

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Copyright information

© Springer-Verlag Berlin Heidelberg 1998

Authors and Affiliations

  • L. V. Dao
    • 1
  • M. Gal
    • 1
  • H. H. Tan
    • 1
    • 2
  • C. Jagadish
    • 1
    • 2
  1. 1.School of Physics, University of New South WalesSydneyAustralia
  2. 2.Dept. Electr. Mat.Eng., Research School of Physical Sciences and EngineeringIAS Australian National UniversityCanberraAustralia

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