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Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer

  • Conference paper
Ultrafast Phenomena XI

Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 63))

Abstract

A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.

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References

  1. T. Enoki, H. Ito, K. Ikuta and Y. Ishii, in Proc. 1995 Int’l. Conf. on IPRM, 81, 1995.

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Author information

Authors and Affiliations

  1. NTT System Electronics Laboratories, 3-1 Morinosato Wakamyia, Atsugi, Kanagawa, 243-0198, Japan

    Nabil Sahri, Tadao Nagatsuma & Makoto Yaita

  2. NTT Optical Network Systems Laboratories, 1-1 Hikarinooka, Yokosuka, Kanagawa, 243-0487, Japan

    Taiichi Otsuji & Naofumi Shimizu

Authors
  1. Nabil Sahri
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  2. Tadao Nagatsuma
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  3. Taiichi Otsuji
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  4. Naofumi Shimizu
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  5. Makoto Yaita
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© 1998 Springer-Verlag Berlin Heidelberg

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Sahri, N., Nagatsuma, T., Otsuji, T., Shimizu, N., Yaita, M. (1998). Characterization of > 300 GHz Transistors Using a Novel Optoelectronic Network Analyzer. In: Ultrafast Phenomena XI. Springer Series in Chemical Physics, vol 63. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-72289-9_58

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  • DOI: https://doi.org/10.1007/978-3-642-72289-9_58

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-72291-2

  • Online ISBN: 978-3-642-72289-9

  • eBook Packages: Springer Book Archive

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