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Mesoscopic Physics and Electronics pp 264–271Cite as

SiGe Quantum Structures

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Part of the book series: NanoScience and Technology ((NANO))

Abstract

Si-based heterostructures are being intensively studied since various new functionalities which cannot be obtained with Si alone are expected owing to the predictable and controllable modification of the band structure [1]. In particular, SiGe/Si heterostructures are of great importance and have had significant impact on Si-based device applications as well as on the basic science of semiconductors. The built-in strain is not an obstacle but is now regarded as an advantage since it can give additional flexibility in the band engineering.

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Authors
  1. N. Usami
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  2. Y. Shiraki
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Editor information

Editors and Affiliations

  1. Institute for Solid State Physics, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan

    T. Ando

  2. Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan

    Y. Arakawa

  3. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-1-12 O-okayama, Meguro-ku, Tokyo 152, Japan

    K. Furuya

  4. Department of Basic Science, University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153, Japan

    S. Komiyama

  5. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan

    H. Nakashima

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© 1998 Springer-Verlag Berlin Heidelberg

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Usami, N., Shiraki, Y. (1998). SiGe Quantum Structures. In: Ando, T., Arakawa, Y., Furuya, K., Komiyama, S., Nakashima, H. (eds) Mesoscopic Physics and Electronics. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71976-9_35

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  • DOI: https://doi.org/10.1007/978-3-642-71976-9_35

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-71978-3

  • Online ISBN: 978-3-642-71976-9

  • eBook Packages: Springer Book Archive

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