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Tilted T-Shaped and (775)B Quantum Wires

  • S. Hiyamizu
Part of the NanoScience and Technology book series (NANO)

Abstract

We describe two kinds of high quality GaAs/A1GaAs quantum wires (QWRs) grown by MBE: (1) GaAs/Al0.3 Ga0.7As tilted T-shaped QWRs (T-QWRs) with extremely precisely controlled line width and cross section fabricated on reverse-mesa etched stripes on a (100) GaAs substrate by a two-step growth of glancing-angle MBE (GA-MBE) and normal MBE and (2) extremely high density (8x105 cm−1) of GaAs/AlAs QWRs naturally formed in a GaAs/AlAs quantum well (QW) with a regularly corrugated AlAs/GaAs interface and a flat GaAs/AlAs interface grown on a (775)B-oriented GaAs substrate by MBE. The former is favorably compared with conventional T-QWRs fabricated on a (110) cleaved surface of a GaAs/AlGaAs multi-quantum well (MQW) layer by cleaved edge overgrowth (CEO), because many tilted TQWRs can be made on a large area of usual (100) GaAs substrate surface. The latter shows high optical quality, high density, and high uniformity in addition to high reproducibility of fabrication, indicating its high application potential for optical devices.

Keywords

Quantum Well GaAs Substrate Quantum Wire Polarization Degree GaAs Surface 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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© Springer-Verlag Berlin Heidelberg 1998

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  • S. Hiyamizu

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