Abstract
We describe two kinds of high quality GaAs/A1GaAs quantum wires (QWRs) grown by MBE: (1) GaAs/Al0.3 Ga0.7As tilted T-shaped QWRs (T-QWRs) with extremely precisely controlled line width and cross section fabricated on reverse-mesa etched stripes on a (100) GaAs substrate by a two-step growth of glancing-angle MBE (GA-MBE) and normal MBE and (2) extremely high density (8x105 cm−1) of GaAs/AlAs QWRs naturally formed in a GaAs/AlAs quantum well (QW) with a regularly corrugated AlAs/GaAs interface and a flat GaAs/AlAs interface grown on a (775)B-oriented GaAs substrate by MBE. The former is favorably compared with conventional T-QWRs fabricated on a (110) cleaved surface of a GaAs/AlGaAs multi-quantum well (MQW) layer by cleaved edge overgrowth (CEO), because many tilted TQWRs can be made on a large area of usual (100) GaAs substrate surface. The latter shows high optical quality, high density, and high uniformity in addition to high reproducibility of fabrication, indicating its high application potential for optical devices.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
L.N. Pfeiffer, K.W. West, H.L. Stormer, J.P. Eisenstein, K. W. Baldwin, D. Gershoni, and J. Spector, Appl. Phys. Lett. 56, 1697 (1990)
W. Wegscheider, L.N. Pferffer, M.M. Dignam, A. Pinczuk, K.W. West, S.L. McCall, and R. Hull, Phys. Rev. Lett. 71, 4071 (1993)
T. Someya, H. Akiyama, and H. Sakaki, Phys. Rev. Lett. 74, 3664 (1995)
T. Someya, H. Akiyama, and H. Sakaki, Appl. Phys. Lett. 66, 3672 (1995)
S. Shimomura, K. Inoue, M. Tanaka, N Tornita, A. Adachi, M. Fujii, T. Yamamoto, T. Watanabe, N. Sano, K. Murase, and S. Hiyamizu, Solid-State Electron. 37, 597 (1994)
N. Tornita, M. Tanaka, T. Saeki, K. Fujita, T. Watanabe, T. Higuchi, N. Sano, A. Adachi, S. Shimomura, and S. Hiyamizu, J. Vac. Sci. Technol. B 14, 3550 (1996)
N. Tornita, T. Kishi, K. Takekawa, K. Fujita, T. Watanabe, A. Adachi, S. Shimomura, and S. Hiyamizu, to be published in J. Cryst. Growth (1997)
N. Tornita, K. Takekawa, K. Ohta, K. Fujita, N. Egami, Y. Okamoto, S. Shimomura, and S. Hiyamizu, J. Vac. Sci. Technol. B (submitted for publication)
M. Higashiwaki, M. Yamamoto, T. Higuchi, S. Shimomura, A. Adachi, Y. Okamoto, N, Sano, and S. Hiyamizu, Jpn. J. Appl. Phys. 35, 606 (1996)
S. Hara, J. Motohisa, T. Fukui, and H. Hasegawa, Jpn. J. Appl. Phys. 34, 4401 (1995)
M. Takeuchi, K. Shiba, K. Sato, H. K. Huang, K. Inoue, and H. Nakashima, Jpn. J. Appl. Phys. 34, 4411 (1995)
M. Takeuchi, T. Takeuchi, Y. Inoue, T. Kato, K. Inoue, H. Nakashima, K. Maehashi, P. Fischer, J. Christen, M. Grundmann, and D. Bimberg, Superlattices & Microstructures 22, 43 (1997)
R. Nötzel, N. N. Ledentsov, L. Däweritz, K. Ploog, and M. Hohenstein, Phys. Rev. B 45, 3507 (1992)
M. Higashiwaki, M. Yamamoto, S. Shimomura, A. Adachi, and S. Hiyamizu, to be published in J. Cryst. Growth (1997)
M. Higashiwaki, M. Yamamoto, S. Shimomura, S. Hiyamizu, unpublished
C. R. McIntyre, and L. J. Sham, Phys. Rev. B 45, 9443 (1995)
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1998 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
Hiyamizu, S. (1998). Tilted T-Shaped and (775)B Quantum Wires. In: Ando, T., Arakawa, Y., Furuya, K., Komiyama, S., Nakashima, H. (eds) Mesoscopic Physics and Electronics. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71976-9_34
Download citation
DOI: https://doi.org/10.1007/978-3-642-71976-9_34
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-71978-3
Online ISBN: 978-3-642-71976-9
eBook Packages: Springer Book Archive