Skip to main content
SpringerLink
Log in

Quantum Wires on Vicinal GaAs (110) Surfaces

  • Chapter
Mesoscopic Physics and Electronics

Part of the book series: NanoScience and Technology ((NANO))

  • 795 Accesses

Abstract

MBE growth of GaAs on GaAs (110) surfaces has been reported not to provide smooth surface morphology due to columnar growth of epitaxial layers [1]. Highly faceted surfaces are observed for MBE growth on (110) surfaces. Only vicinal (110) surfaces misoriented 6° toward (111)A have provided device quality GaAs layers [2]. However, when GaAs/AlGaAs superlattices are grown on vicinal (110) surfaces misoriented toward (111)A, quantum wire-like (QWR-like) structures have been observed [3,4]. These QWR-like structures are induced by the formation of coherently aligned giant growth steps and remarkable composition and thickness modulation of AlGaAs and GaAs layers at the giant step edges. Using these phenomena, A1GaAs and GaAs quantum wires (QWRs) have been formed on vicinal (110) surfaces misoriented toward (111)A.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. W.I. Wang. J. Vac. Sci. Technol. B 1, 630 (1983)

    Article  CAS  Google Scholar 

  2. L.T.P. Allen, E. R. Weber, J. Washburn, and Y.C. Pao. Appl. Phys. Lett. 51, 670 (1987)

    Article  CAS  Google Scholar 

  3. M. Sato, K. Maehashi, H. Asahi, S. Hasegawa, and H. Nakashima. Superlattices and Microstructures, 7, 279 (1990)

    Article  CAS  Google Scholar 

  4. S. Hasegawa, M. Sato, K. Maehashi, H. Asahi, and H. Nakashima. J. Crystal Growth, 111, 371 (1991)

    Article  CAS  Google Scholar 

  5. S. Hasegawa, K. Kimura, M. Sato, K. Maehashi, and H. Nakashima, Surf. Sci. 267, 5 (1992)

    Article  CAS  Google Scholar 

  6. S. Hasegawa, K. Sato, S. Toril, and H. Nakashima, to be published in J. Crystal Growth

    Google Scholar 

  7. M. Takeuchi, K. Shiba, H. K. Huang, K. Inoue, K. Maehashi, and H. Nakashima, J. Crytal Growth 150, 441 (1995)

    Article  CAS  Google Scholar 

  8. K. Inoue, K. Kimura, K. Maehashi, S. Hasegawa, H. Nakashima, M. Iwane, O. Matsuda, and K. Murase, J. Crystal Growth 127, 1041 (1993)

    Article  CAS  Google Scholar 

  9. H. Nakashima, M. Takeuchi, K. Kimura, M. Iwane, H. K. Huang, K. Inoue, J. Christen, M. Grundmann and D. Bimberg, Solid-State Electron. 40, 319 (1996)

    Article  CAS  Google Scholar 

  10. M. Takeuchi, K. Shiba, K. Sato, H.K. Huang, K. Inoue, and H. Nakashima, Jpn. J. Appl. Phys. 34, 4411 (1995)

    Article  CAS  Google Scholar 

  11. H. Nakashima, M. Takeuchi, K. Inoue, T. Takeuchi, Y. Inoue, P. Fischer, J. Christen, M. Grundmann, and D. Bimberg, Physica B 227, 291 (1996)

    Article  CAS  Google Scholar 

  12. M. Takeuchi, T. Takeuchi, Y. Inoue, T. Kato, K. Inoue, H. Nakashima, K. Maehashi, P. Fischer, J. Christen, M. Grundmann, and D. Bimberg, Superlattices & Microstructures 22 (1997) (in press)

    Google Scholar 

  13. T. Kato, T. Takeuchi, Y. Inoue, K. Inoue, S. Hasegawa, and H. Nakashima, Extended Abstract of 1996 Int. Conf. on Solid State Devices and Materials, Yokohama, 1996, p. 872

    Google Scholar 

Download references

Authors
  1. H. Nakashima
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Institute for Solid State Physics, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan

    T. Ando

  2. Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan

    Y. Arakawa

  3. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-1-12 O-okayama, Meguro-ku, Tokyo 152, Japan

    K. Furuya

  4. Department of Basic Science, University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153, Japan

    S. Komiyama

  5. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan

    H. Nakashima

Rights and permissions

Reprints and permissions

Copyright information

© 1998 Springer-Verlag Berlin Heidelberg

About this chapter

Cite this chapter

Nakashima, H. (1998). Quantum Wires on Vicinal GaAs (110) Surfaces. In: Ando, T., Arakawa, Y., Furuya, K., Komiyama, S., Nakashima, H. (eds) Mesoscopic Physics and Electronics. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71976-9_33

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-71976-9_33

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-71978-3

  • Online ISBN: 978-3-642-71976-9

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation