Quantum Wires and Dots by MOCVD (II)

Abstract

To fabricate quantum wires, various techniques such as wet chemical etching [1], reactive ion etching [2], ion beam implantation [3], and ion beam milling [4,5] have been investigated. These methods suffer from free surface effects, creation of a damage field during implantation, or interface problems due to various disordering mechanisms. To avoid these problems, growth techniques on masked substrates [6,7] and nonplanar substrates [8–10] have been investigated. Pioneering work by Kapon et al. successfully fabricated quantum wires on V-grooved (100) oriented GaAs substrates [8] or submicron gratings [9] by MOCVD. Vertically-stacked quantum wires on a single V-groove were also achieved [10]. In these works wet chemical etching was used.