Quantum Wires and Dots by MOCVD (I)
The use of monoatomic and multi-atomic steps formed on vicinal (001) GaAs substrates has been proposed and demonstrated to realize two-dimensional quantum confinement structures such as quantum wires (QWRs) grown by MOCVD [1–4] which can be used as a new type of electron wave interference device  Similar QWR structures have been observed in tilted GaAs/AlAs superlattices on vicinal (001) GaAs substrates grown by MBE , in a thin In-GaAs layer at the edge of InP multiatomic steps on vicinal (001) InP surfaces grown by metalorganic MBE , and in a thin AlGaAs composition modulation layer at the edge of AlAs multiatomic steps on vicinal (110) GaAs substrates grown by gas-source MBE . In this section we review some of these structures.
KeywordsQuantum Well GaAs Substrate Quantum Wire Indium Content InGaAs Layer
Unable to display preview. Download preview PDF.