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Electron-Wave Reflection and Resonance Devices

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Mesoscopic Physics and Electronics

Part of the book series: NanoScience and Technology ((NANO))

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Abstract

Metal/insulator ultrathin heterostructures are good candidates for high-speed electron devices, because the high carrier density of the metal and the low dielectric constant of the insulator are suitable for size reduction and high-speed operation [1,2]. In addition, due to a very large conduction-band discontinuity at the heterointerface, the interference of the electron wave is expected to become significant in, multilayer structures, which result in high transconductance and multifunctionality of the quantum-effect devices [3,4].

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Authors
  1. M. Asada
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Editor information

Editors and Affiliations

  1. Institute for Solid State Physics, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan

    T. Ando

  2. Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan

    Y. Arakawa

  3. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-1-12 O-okayama, Meguro-ku, Tokyo 152, Japan

    K. Furuya

  4. Department of Basic Science, University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153, Japan

    S. Komiyama

  5. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan

    H. Nakashima

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© 1998 Springer-Verlag Berlin Heidelberg

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Asada, M. (1998). Electron-Wave Reflection and Resonance Devices. In: Ando, T., Arakawa, Y., Furuya, K., Komiyama, S., Nakashima, H. (eds) Mesoscopic Physics and Electronics. NanoScience and Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71976-9_25

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  • DOI: https://doi.org/10.1007/978-3-642-71976-9_25

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-71978-3

  • Online ISBN: 978-3-642-71976-9

  • eBook Packages: Springer Book Archive

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