Electron-Wave Reflection and Resonance Devices
Metal/insulator ultrathin heterostructures are good candidates for high-speed electron devices, because the high carrier density of the metal and the low dielectric constant of the insulator are suitable for size reduction and high-speed operation [1,2]. In addition, due to a very large conduction-band discontinuity at the heterointerface, the interference of the electron wave is expected to become significant in, multilayer structures, which result in high transconductance and multifunctionality of the quantum-effect devices [3,4].
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- 4.T. Sakaguchi, M. Watanabe, and M. Asada, IEICE Trans. E74, 3326 (1991)Google Scholar