Introduction

Abstract

A reduction of the dimensionality of the electron motion in quantum wells, wires, and dots is expected to realize new device concepts or improvements in the performance of existing devices, such as transistors and lasers. In 1982, Arakawa and Sakaki proposed the use of quantum wires or dots as an active medium in semiconductor lasers, suggesting a significant improvement of lasing characteristics [1]. The quantum wire effects were realized by placing double heterostructure lasers in a high magnetic field [2]. This report is the first in which the concept of three-dimensionally confined electrons in semiconductor quantum dots is discussed. The target is still distant, because sufficiently small and uniform structures must be achieved.