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Nonequilibrium Phase Transitions in Semiconductors pp 142–196Cite as

Stationary Transverse Spatial Structures

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Part of the book series: Springer Series in Synergetics ((SSSYN,volume 35))

Abstract

In the previous chapter we have shown by a linear-mode analysis that g-r instabilities of SNDC type can lead to the growth of spatial fluctuations modulated perpendicular to the homogeneous field and current flow, and to the bifurcation of stationary plane current layers (sheaths) and cylindrical current filaments. In this chapter we calculate the fully developed stationary transverse structures from the nonlinear transport equations [4.1–6]. In particular, we analyze the resulting current-voltage characteristics and their dependence upon boundary conditions. The first three sections deal with single-carrier g-r mechanisms, while the last two consider two-carrier mechanisms. Dissipative structures in semiconductors, like current filaments, do not only essentially influence the current-voltage characteristics, but can also be observed directly in experiments.

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Chapter 4

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  1. Institut für Theoretische Physik, Rheinisch-Westfälische Technische Hochschule, Templergraben, D-5100, Aachen, Fed. Rep. of Germany

    Priv.-Doz. Dr. rer. nat. Eckehard Schöll Ph. D.

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  1. Priv.-Doz. Dr. rer. nat. Eckehard Schöll Ph. D.
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© 1987 Springer-Verlag Berlin Heidelberg

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Schöll, E. (1987). Stationary Transverse Spatial Structures. In: Nonequilibrium Phase Transitions in Semiconductors. Springer Series in Synergetics, vol 35. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71927-1_4

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  • DOI: https://doi.org/10.1007/978-3-642-71927-1_4

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