H and D Tunneling in Nb: Dependence on Defect Concentration and Trapping Center

  • P. Gutsmiedl
  • M. Schiekhofer
  • K. Neumaier
  • H. Wipf
Part of the Springer Proceedings in Physics book series (SPPHY, volume 17)

Abstract

Low-temperature tunneling of H or D interstitials trapped by impurity atoms such as O or N in Nb has been investigated by various methods such as specific heat, thermal conductivity, ultrasonic (anelastic) and neutron spectroscopic measurements. The experiments show (i) that the O (or N) impurity atoms trap hydrogen interstitials at low temperatures, and (ii) that the trapped hydrogen is delocalized among (most likely) two nearest-neighbor tetrahedral interstitial sites (for a detailed discussion see /1,2/).

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Copyright information

© Springer-Verlag Berlin Heidelberg 1987

Authors and Affiliations

  • P. Gutsmiedl
    • 1
  • M. Schiekhofer
    • 1
  • K. Neumaier
    • 1
  • H. Wipf
    • 2
  1. 1.Walther-Meissner-Institut für TieftemperaturforschungGarchingFed. Rep. of Germany
  2. 2.Institut für FestkörperphysikTechnische Hochschule DarmstadtDarmstadtFed. Rep. of Germany

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