H and D Tunneling in Nb: Dependence on Defect Concentration and Trapping Center
Low-temperature tunneling of H or D interstitials trapped by impurity atoms such as O or N in Nb has been investigated by various methods such as specific heat, thermal conductivity, ultrasonic (anelastic) and neutron spectroscopic measurements. The experiments show (i) that the O (or N) impurity atoms trap hydrogen interstitials at low temperatures, and (ii) that the trapped hydrogen is delocalized among (most likely) two nearest-neighbor tetrahedral interstitial sites (for a detailed discussion see /1,2/).
Unable to display preview. Download preview PDF.
- 2.H. Wipf, K. Neumaier: In Electronic Structure and Properties of Hydrogen in Metals, eds. P. Jena, C. B. Satterthwaite, Plenum Publishing Corp., New York and London 1983, p. 485Google Scholar
- 3.E. Fromm, H., Jehn, Metall. Trans. 3, 1685 (1972)Google Scholar
- 4.H. Schultz, Mat. Sci. Eng. 3, 189 (1968/69)Google Scholar
- 8.H. Wipf, A. Magerl, S. M. Shapiro, S.K. Satija, W. Thomlinson Proc. Miami. Int. Symp. on Metal-Hydrogen Systems, Miami 1981Google Scholar
- 11.A. Magerl, private communicationGoogle Scholar