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H and D Tunneling in Nb: Dependence on Defect Concentration and Trapping Center

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Quantum Aspects of Molecular Motions in Solids

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 17))

Abstract

Low-temperature tunneling of H or D interstitials trapped by impurity atoms such as O or N in Nb has been investigated by various methods such as specific heat, thermal conductivity, ultrasonic (anelastic) and neutron spectroscopic measurements. The experiments show (i) that the O (or N) impurity atoms trap hydrogen interstitials at low temperatures, and (ii) that the trapped hydrogen is delocalized among (most likely) two nearest-neighbor tetrahedral interstitial sites (for a detailed discussion see /1,2/).

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© 1987 Springer-Verlag Berlin Heidelberg

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Gutsmiedl, P., Schiekhofer, M., Neumaier, K., Wipf, H. (1987). H and D Tunneling in Nb: Dependence on Defect Concentration and Trapping Center. In: Heidemann, A., Magerl, A., Richter, D., Prager, M., Springer, T. (eds) Quantum Aspects of Molecular Motions in Solids. Springer Proceedings in Physics, vol 17. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71914-1_27

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  • DOI: https://doi.org/10.1007/978-3-642-71914-1_27

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-71916-5

  • Online ISBN: 978-3-642-71914-1

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