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Room-Temperature Bulk GaAs: Dominant Nonlinearities, Fast-Recovery Gates, Arrays for Parallel Processing

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Electro-optic and Photorefractive Materials

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 18))

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Abstract

Reduction of continuum enhancement and band filling are the dominant optical nonlinearities at room temperature. Surface recombination gives a 30-ps recovery time following AND-gate operation. Reactive ion etching can be used to define large arrays of pixels for parallel processing.

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References

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Author information

Authors and Affiliations

  1. Optical Circuitry Cooperative and Optical Sciences Center, University of Arizona, Tucson, 85721, AZ, USA

    H. M. Gibbs, N. Peyghambarian, Y. H. Lee, M. Warren, A. Chavez-Pirson, S. H. Park, J. Morhange, A. Jeffrey & S. W. Koch

  2. AT&T Bell Laboratories, Murray Hill, 07974, NJ, USA

    A. C. Gossard & W. Wiegmann

Authors
  1. H. M. Gibbs
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  2. N. Peyghambarian
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  3. Y. H. Lee
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  4. M. Warren
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  5. A. Chavez-Pirson
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  6. S. H. Park
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  7. J. Morhange
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  8. A. Jeffrey
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  9. S. W. Koch
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  10. A. C. Gossard
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  11. W. Wiegmann
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Editor information

Editors and Affiliations

  1. Laboratorium für Festkörperphysik, Eidgenössische Technische Hochschule, ETH-Hönggerberg, CH-8093, Zürich, Switzerland

    Peter Günter

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© 1987 Springer-Verlag Berlin Heidelberg

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Gibbs, H.M. et al. (1987). Room-Temperature Bulk GaAs: Dominant Nonlinearities, Fast-Recovery Gates, Arrays for Parallel Processing. In: Günter, P. (eds) Electro-optic and Photorefractive Materials. Springer Proceedings in Physics, vol 18. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71907-3_16

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  • DOI: https://doi.org/10.1007/978-3-642-71907-3_16

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-71909-7

  • Online ISBN: 978-3-642-71907-3

  • eBook Packages: Springer Book Archive

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