Abstract
Physical images in resists are produced when radiations (photons, electrons, ions or neutral particules) interact with the macromolecules and initiate physical or chemical changes which are then developed in order to create geometrical patterns. The mask defines the material areas to be exposed and therefore the geometry of the patterns to be produced.Resist materials can be classified /l/ as positive or negative resists, according to their behavior when submitted to radiations (Fig.l). But resist can also be subdivided into two categories depending upon the number of the basic chemical components.
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© 1986 Springer-Verlag Berlin Heidelberg
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Weill, A. (1986). Resists Patterning. In: Kelly, M.J., Weisbuch, C. (eds) The Physics and Fabrication of Microstructures and Microdevices. Springer Proceedings in Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71446-7_5
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DOI: https://doi.org/10.1007/978-3-642-71446-7_5
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