Abstract
One of the major challenges in modern microelectronics is the creation of microwave devices or very high speed logic switches working in the 100 GHz range. It is now clear that device performances are no more limited by the transit time of the carriers in the active region of the structures. For instance, a p-n-p transistor with a 1 µm base width could in principle, operate in the 100 GHz range (for a saturation velocity of 107 cm/sec as in most common semiconductors) while the best results obtained in Si, using a super self-aligned technology (S.S.T.), are in the 20 GHz range [1]. This limitation is clearly due to the RaccCp time constant of the device, Racc being the access resistance and Cp the parasitic capacitance of the device.
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© 1986 Springer-Verlag Berlin Heidelberg
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Rosencher, E. (1986). The Metal Base Transistors. In: Kelly, M.J., Weisbuch, C. (eds) The Physics and Fabrication of Microstructures and Microdevices. Springer Proceedings in Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71446-7_31
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DOI: https://doi.org/10.1007/978-3-642-71446-7_31
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