Abstract
Semiconductor structures allow a comprehensive range of experiments into the role of disorder on electronic transport /1,2/. Structures containing a 2D electron gas possess the advantage of having a variable carrier concentration, whereas in 3D systems the role of disorder is changed in situ by the application of compression or shrinkage of wavefunction by a magnetic field. The principal structures in this type of work are the inversion layer of the silicon MOSFET, heterojunctions in 111-V semiconductors (principally GaAs-AlGaAs) and the GaAs MESFET. The reader is referred to the Review article by ANDO et al /1/ for further details.
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Pepper, M. (1986). 2D Localisation and Interaction Effects in Semiconductor Structures. In: Kelly, M.J., Weisbuch, C. (eds) The Physics and Fabrication of Microstructures and Microdevices. Springer Proceedings in Physics, vol 13. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-71446-7_24
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DOI: https://doi.org/10.1007/978-3-642-71446-7_24
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