Transport Physics of Multicontact Si MOS Nanostructures

  • W. J. Skocpol
Part of the Springer Proceedings in Physics book series (SPPHY, volume 13)


Nanofabrication technology makes possible new types of physics experiments. In this chapter, I describe silicon MOSFET devices with extra voltage-measuring contacts and widths as narrow as 40 nm. These allow exploration of both classical and quantum electron transport phenomena on nanometer length scales.


Gate Voltage Resistance Switching Inversion Layer Gate Oxide Weak Localization 
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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • W. J. Skocpol
    • 1
  1. 1.AT&T Bell LaboratoriesHolmdelUSA

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