Transport Physics of Multicontact Si MOS Nanostructures

  • W. J. Skocpol
Conference paper
Part of the Springer Proceedings in Physics book series (SPPHY, volume 13)

Abstract

Nanofabrication technology makes possible new types of physics experiments. In this chapter, I describe silicon MOSFET devices with extra voltage-measuring contacts and widths as narrow as 40 nm. These allow exploration of both classical and quantum electron transport phenomena on nanometer length scales.

Keywords

Kelly NiCr Polysilicon soUd 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • W. J. Skocpol
    • 1
  1. 1.AT&T Bell LaboratoriesHolmdelUSA

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