Molecular Beam Epitaxy of III-V Compounds

  • J. Massies
Conference paper

Abstract

This paper does not intend to give a review on Molecular Beam Epitaxy (MBE) of III-V compounds, since several excellent review papers have already been published on this topic (see the bibliography section). According to the spirit of the school, our purpose is rather to give insights into the basic principles and the technology of MBE applied to the III-V compounds epitaxial growth, with particular emphasis on what we believe to be the crucial points in order to succeed in performing MBE.

Keywords

Phosphorus Arsenic Boron GaAs Molybdenum 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1986

Authors and Affiliations

  • J. Massies
    • 1
  1. 1.Laboratoire Physique du Solide et Energie SolaireCNRS Sophia AntipolisValbonneFrance

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