Two Dimensional E-Field Mapping with Subpicosecond Resolution
With the development of very high speed semiconductor devices which respond in the picosecond regime, such as the heterojunction bipolar transistor, permeable base transistor, GaAs MESFET and TEGFET, the need has arisen for new techniques to directly measure device response on this time scale. The continuing advancement of VLSI circuits also requires the development of new characterization techniques. The recent development of photoconductive  and electro-optic [2, 3, 4, 5, 6, 7] sampling techniques has advanced the art of device characterization to meet some of these needs. The latter has been used to measure electrical transients as fast as 0.46 ps with submillivolt sensitivity [ 5, 6, 7].
KeywordsMicrowave Lithium GaAs Diene
Unable to display preview. Download preview PDF.
- 3.J. A. Valdmanis, G. A. Mourou and C. W. Gabel, SPIE 439, 142 (1983).Google Scholar
- 4.J. A. Valdmanis, G. A. Mourou, and C. W. Gabel, IEEE J. Quantum Electron. QE-17, 664 (1982).Google Scholar
- 6.K. E. Meyer and G. A. Mourou, Proceedings of the Fourth International Conference on Ultrafast Phenomena, Monterey, California, 1984, pp. 406–408.Google Scholar
- 7.K. E. Meyer and G. A. Mourou, Proceedings of the Conference on Lasers and Electro-optics, Anaheim, California, 1984, p. 70.Google Scholar
- 8.G. Hasnein, G. Arjavalingam, A. Dienes, and J. R. Whinnery, SPIE 439, 27 (1983).Google Scholar
- 10.T. Norris, T. Sizer and G. A. Mourou, J. Opt. Soc. Am. B, to be published.Google Scholar
- 11.I. Duling, T. Norris, T. Sizer, P. Bado, and G. A. Mourou, J. Opt. Soc. Am. B, to be published.Google Scholar