Two Dimensional E-Field Mapping with Subpicosecond Resolution

  • K. E. Meyer
  • G. A. Mourou
Part of the Springer Series in Electrophysics book series (SSEP, volume 21)

Abstract

With the development of very high speed semiconductor devices which respond in the picosecond regime, such as the heterojunction bipolar transistor, permeable base transistor, GaAs MESFET and TEGFET, the need has arisen for new techniques to directly measure device response on this time scale. The continuing advancement of VLSI circuits also requires the development of new characterization techniques. The recent development of photoconductive [1] and electro-optic [2, 3, 4, 5, 6, 7] sampling techniques has advanced the art of device characterization to meet some of these needs. The latter has been used to measure electrical transients as fast as 0.46 ps with submillivolt sensitivity [ 5, 6, 7].

Keywords

Microwave Lithium GaAs Diene 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • K. E. Meyer
    • 1
  • G. A. Mourou
    • 1
  1. 1.Laboratory for Laser EnergeticsUniversity of RochesterRochesterUSA

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