Modulation of an Optical Beam by a Second Optical Beam in Biased Semi-Insulating GaAs

  • L. M. Walpita
  • W. S. C. Chang
  • H. H. Wieder
  • T. E. Van Eck
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 21)

Abstract

The potential of high speed and large information capacity of optical systems has initiated much interest in optical device research[1,2,3]. A variety of bulk optical semiconductor bistable devices have been demonstrated[2]. Further, multiple-quantum-well (MQW) structures have been shown to have nonlinear properties which will be useful in device applications[3,4,5]. We have observed modulation of radiation at wavelength λ1 (below and near the bandgap), induced by a second radiation at wavelengtn λ2 (above the bandgap) in Semi-Insulating GaAs (SI GaAs) in the presence of electric fields. This effect could potentially be used to obtain AND gate optical logic function. This property is expected to exist in other direct bandgap III–V compound semiconductors such as InP and to much larger extent in MQW structures. Here we discuss some of the results obtained during the experimental investigation on SI GaAs.

Keywords

Attenuation GaAs Refraction 

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References

  1. 1.
    P. W. Smith, “On the Physical Limits of Digital Optical Switching and Logic Elements”, Bell Sys. Tech. J., 61, 1975 (1982).Google Scholar
  2. 2.
    D. A. B. Miller, S. Des Smith, Colin T. Seaton, “Optical Bistability in Semiconductors”, IEEE J. of Quantum Electronics, 17, 313 (1981).Google Scholar
  3. 3.
    D. S. Chemla, D. A. B. Miller, P. W. Smith, A. C. Gossard, W. Wiegmann, “Room-Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures”, IEEE J. of Quantum Electronics, 20, 265 (1984).CrossRefGoogle Scholar
  4. 4.
    D. A. B. Miller, D. S. Chemla and T. C. Daman, A. C. Gossard, W. Wiegmann, T. M. Wood, “Novel Hybrid Optical Bistable Switch: The Quantum Well Self-Electro Optic Effect Device”, Appl. Phys. Lett. 45, 13 (1984).CrossRefGoogle Scholar
  5. 5.
    A. Migus, A. Antonetti, D. Hulin, A. Mysyrowicz, H. M. Gibbs, N. Peyghambarian, J. L. Jewell, “One-Picosecond Optical NOR Gate at Room Temperature with GaAs-AlGaAs Multiple-Quantum-Well Nonlinear Fabry-Perot Etalon”, Appl. Phys. Lett. 46, 70 (1985).CrossRefGoogle Scholar
  6. 6.
    G. E. Stilman, C. M. Wolfe, C. O. Bozier and J. A. Rossi, “Electroabsorption in GaAs and its application to waveguide detectors and modulators”, Appl. Phys. Lett. 28, 544 (1976).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • L. M. Walpita
    • 1
  • W. S. C. Chang
    • 1
  • H. H. Wieder
    • 1
  • T. E. Van Eck
    • 1
  1. 1.Department of Electrical Engineering and Computer Sciences, C-014University of CaliforniaSan Diego, La JollaUSA

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