Skip to main content
SpringerLink
Log in

Molecular Beam Epitaxy Materials for High-Speed Digital Heterostructure Devices

  • Conference paper
Picosecond Electronics and Optoelectronics

Part of the book series: Springer Series in Electrophysics ((SSEP,volume 21))

  • 206 Accesses

Abstract

Molecular beam epitaxy (MBE) has made many important contributions to research and development of III–V compound semiconductor devices. This is particulary true for devices using the lattice-matched GaAs/AlGaAs alloys. This has occurred despite the relatively high cost of MBE apparatus and the reputation of MBE as an esoteric technology.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. P. M. Asbeck, D. L. Miller, R. J. Anderson, L. D. Hou, R. Demming, and F. H. Eisen, IEEE Electron Dev. Lett. EDL, 181 (1984).

    Article  Google Scholar 

  2. P. M. Asbeck, D. L. Miller, R. J. Anderson, R. Demming, R. T. Chen, C. A. Leichti, and F. H. Eisen, Tech. Digest 1984 IEEE Gallium Arsenide Integrated Circuit Symposium, Boston, p. 133.

    Google Scholar 

  3. J. N. Miller, D. M. Collins, N. J. Moll, J. S. Kofol, presented at A. I. M.E Electronic Materials Conference, Burlington, VT, 1983 (unpublished).

    Google Scholar 

  4. D. L. Miller and P. M. Asbeck, to appear in J. Appl. Phys., March 1985.

    Google Scholar 

  5. K. Inoue and H. Sakaki, Japan. J. Appl. Phys. 23, L61 (1984).

    Article  Google Scholar 

  6. K. Inoue, H. Sakaki, and J. Yoshino, Japan. J. Appl. Phys. 23, L767 (1984).

    Article  Google Scholar 

  7. K. Nishiuchi, N. Kobayashi, S. Kuroda, S. Notomi, T. Mimura, M. Abe, and M. Kobayashi, IEEE Intl. Solid State Circuits Conf. Tech. Digest 1984, p. 48.

    Google Scholar 

  8. S. Kimoda, T. Mimura, M. Suzuki, N. Kobayashi, K. Nishiuchi, A. Shibatomi, and M. Abe, Tech. Digest 1984 IEEE Gallium Arsenide Integrated Circuit Symposium, Boston, p. 125.

    Google Scholar 

  9. M. Abe, private communication.

    Google Scholar 

  10. M. Shinohara, T. Ito, K. Wada, and Y. Imamura, Japan. J. Appl. Phys. 23, L371 (1984).

    Article  Google Scholar 

  11. T. Baba, T. Mizutani, and M. Ogawa, Japan. J. Appl. Phys. 22, L627 (1983).

    Article  Google Scholar 

  12. T. Baba, T. Mizutani, M. Ogawa and K. Ohata, presented at 42nd Annual Device Research Conference, June 18–20, 1984, Santa Barbara.

    Google Scholar 

  13. T. Sakamoto, H. Funabashi, J. Ohta, T. Nakagawa, N. Kawai, and T. Kojima, Japan. J. Appl. Phys. 23, L657 (1984).

    Article  Google Scholar 

  14. Young G. Chai, Appl. Phys. Lett. 37, 379 (1980).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Microelectronics Research and Development Center, Rockwell International Corporation, 1049 Camino Dos Rios, Thousand Oaks, CA, 91360, USA

    D. L. Miller

Authors
  1. D. L. Miller
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. Department of Physics, The University of Rochester, Rochester, NY, 14627, USA

    Gerard Albert Mourou

  2. Edward L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA

    David M. Bloom

  3. Department of Electrical Engineering, University of Maryland, College Park, MD, 20742, USA

    Chi-H. Lee

Rights and permissions

Reprints and permissions

Copyright information

© 1985 Springer-Verlag Berlin Heidelberg

About this paper

Cite this paper

Miller, D.L. (1985). Molecular Beam Epitaxy Materials for High-Speed Digital Heterostructure Devices. In: Mourou, G.A., Bloom, D.M., Lee, CH. (eds) Picosecond Electronics and Optoelectronics. Springer Series in Electrophysics, vol 21. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-70780-3_21

Download citation

  • DOI: https://doi.org/10.1007/978-3-642-70780-3_21

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-70782-7

  • Online ISBN: 978-3-642-70780-3

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation