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Molecular Beam Epitaxy Materials for High-Speed Digital Heterostructure Devices

  • D. L. Miller
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 21)

Abstract

Molecular beam epitaxy (MBE) has made many important contributions to research and development of III–V compound semiconductor devices. This is particulary true for devices using the lattice-matched GaAs/AlGaAs alloys. This has occurred despite the relatively high cost of MBE apparatus and the reputation of MBE as an esoteric technology.

Keywords

Molecular Beam Epitaxy Molecular Beam Epitaxy Growth Heterostructure Device Oval Defect Arsenic Flux 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • D. L. Miller
    • 1
  1. 1.Microelectronics Research and Development CenterRockwell International CorporationThousand OaksUSA

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