Molecular Beam Epitaxy Materials for High-Speed Digital Heterostructure Devices
Molecular beam epitaxy (MBE) has made many important contributions to research and development of III–V compound semiconductor devices. This is particulary true for devices using the lattice-matched GaAs/AlGaAs alloys. This has occurred despite the relatively high cost of MBE apparatus and the reputation of MBE as an esoteric technology.
KeywordsMolecular Beam Epitaxy Molecular Beam Epitaxy Growth Heterostructure Device Oval Defect Arsenic Flux
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- 2.P. M. Asbeck, D. L. Miller, R. J. Anderson, R. Demming, R. T. Chen, C. A. Leichti, and F. H. Eisen, Tech. Digest 1984 IEEE Gallium Arsenide Integrated Circuit Symposium, Boston, p. 133.Google Scholar
- 3.J. N. Miller, D. M. Collins, N. J. Moll, J. S. Kofol, presented at A. I. M.E Electronic Materials Conference, Burlington, VT, 1983 (unpublished).Google Scholar
- 4.D. L. Miller and P. M. Asbeck, to appear in J. Appl. Phys., March 1985.Google Scholar
- 7.K. Nishiuchi, N. Kobayashi, S. Kuroda, S. Notomi, T. Mimura, M. Abe, and M. Kobayashi, IEEE Intl. Solid State Circuits Conf. Tech. Digest 1984, p. 48.Google Scholar
- 8.S. Kimoda, T. Mimura, M. Suzuki, N. Kobayashi, K. Nishiuchi, A. Shibatomi, and M. Abe, Tech. Digest 1984 IEEE Gallium Arsenide Integrated Circuit Symposium, Boston, p. 125.Google Scholar
- 9.M. Abe, private communication.Google Scholar
- 12.T. Baba, T. Mizutani, M. Ogawa and K. Ohata, presented at 42nd Annual Device Research Conference, June 18–20, 1984, Santa Barbara.Google Scholar