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Modeling of Picosecond Pulse Propagation on Silicon Integrated Circuits

  • K. W. Goossen
  • R. B. Hammond
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 21)

Abstract

We have modeled the dispersion and loss of pulses on microstrip transmission line interconnections on silicon integrated-circuit substrates. Geometric dispersion and conductor linewidth, as well as losses from conductor resistance, conductor skin effect, and substrate conductance are considered over the frequency range from 100 MHz to 100 GHz. Results show the enormous significance of the substrate losses, and demonstrate the need for substrate resistivities >10 Ω-cm for high performance circuits. The results also show the effects of geometric dispersion for frequencies above 10 GHz and the unimportance of conductor skin-effect losses for frequencies up to 100 GHz.

Keywords

Microstrip Line Very Large Scale Integrate Conductor Loss Picosecond Pulse Effective Dielectric Constant 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • K. W. Goossen
    • 1
  • R. B. Hammond
    • 1
  1. 1.Electronics DivisionLos Alamos National LaboratoryLos AlamosUSA

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