Time-Domain Measurements for Silicon Integrated Circuit Testing Using Photoconductors
Picosecond time-domain measurements of silicon-integrated circuit interconnects were successfully performed using both bulk silicon photoconductors and polycrystalline (poly-Si) silicon photoconductors integrated on-chip. Standard integrated circuit fabrication techniques, followed by shadow-masked, ion-beam irradiation were used to create the photoconductor/interconnect structures on silicon wafers of 6-ohm-cm to 70-ohm-cm resistivities. A subpicosecond pulsed laser system excited the photoconductors to produce and sample electrical pulses on the Si substrate.
KeywordsTransmission Line Active Device Bulk Silicon Step Pulser Sampling Gate
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