Time-Domain Measurements for Silicon Integrated Circuit Testing Using Photoconductors

  • W. R. Eisenstadt
  • R. B. Hammond
  • D. R. Bowman
  • R. W. Dutton
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 21)


Picosecond time-domain measurements of silicon-integrated circuit interconnects were successfully performed using both bulk silicon photoconductors and polycrystalline (poly-Si) silicon photoconductors integrated on-chip. Standard integrated circuit fabrication techniques, followed by shadow-masked, ion-beam irradiation were used to create the photoconductor/interconnect structures on silicon wafers of 6-ohm-cm to 70-ohm-cm resistivities. A subpicosecond pulsed laser system excited the photoconductors to produce and sample electrical pulses on the Si substrate.


Transmission Line Active Device Bulk Silicon Step Pulser Sampling Gate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    W. R. Eisenstadt, R. B. Hammond, and R. W. Dutton, “Integrated Silicon Photoconductors for Picosecond Pulsing and Gating,” IEEE Elec. Dev. Letts. EDL-5, 296-259 (Aug. 1984).Google Scholar
  2. 2.
    R. B. Hammond, N. G. Paulter, R. S. Wagner, and W. R. Eisenstadt, “Integrated Picosecond Photoconductors Produced on Bulk Silicon Substrates,” Appl. Phys. Letts. 45, 404–405 (1984).CrossRefGoogle Scholar
  3. 3.
    W. R. Eisenstadt, R. B. Hammond and R. W. Dutton, “On-Chip Picosecond, Time-Domain Measurements for VLSI and Interconnect Testing Using Photoconductors,” IEEE Trans. on Elec. Dev. (Feb. 1984) and IEEE Jour. of Sol. State Cir. SC-20, 284–289 (Feb. 1984).Google Scholar
  4. 4.
    R. B. Hammond and N. M. Johnson, “Impulse Photoconductance of Thin Film Polycrystalline Silicon,” to be published in Jour. App. Phys.Google Scholar
  5. 5.
    D. R. Bowman, R. B. Hammond, and R. W. Dutton, “Improved Integrated Photoconductors for Picosecond Pulsing and Gating Using Polycrystalline Silicon,” unpublished.Google Scholar
  6. 6.
    D. H. Auston, “Impulse Response of Photoconductors in Transmission Lines,” IEEE Journal of Quantum Electronics, Vol QE-19, pp. 639–648, 1983.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1985

Authors and Affiliations

  • W. R. Eisenstadt
    • 1
  • R. B. Hammond
    • 2
  • D. R. Bowman
    • 3
  • R. W. Dutton
    • 3
  1. 1.Electrical Engineering DepartmentUniversity of FloridaGainesvilleUSA
  2. 2.Electronics DivisionLos Alamos National LaboratoryLos AlamosUSA
  3. 3.Integrated Circuits LaboratoryStanford UniversityStanfordUSA

Personalised recommendations