Beam Annealing of Ion-Implanted Silicon

Abstract

Extaensive research has been performed over the past several years on the use of lasers, electron beams and arc sources for annealing damage created in silicon by ion implantation. This field, originally identified as “beam annealing” because its focus was on the removal of defects introduced by ion implantation, has rapidly broadened to encompass much more diverse situations, many of which do not involve ion implantation and may not even involve defect removal. In particular, lasers and electron beams have been used to recrystallize thin films of vapor-deposited polysilicon with substantial improvements in its electronic properties [1]; to facilitate the formation of metal silicides [2]; and to perform a number of other processing functions that are of increasing importance in the fabrication of fine geometry integrated circuits and high speed devices. In this paper we will concern ourselves entirely with the annealing process; specifically, the mechanisms by which laser, electron beam and arc source annealing proceeds and the basic metallurgical and electronic properties of beam annealed material.