Limitations of Ion Implantation in MOS Technology

  • D. Widmann
  • U. Schwabe
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 11)

Abstract

Ion implantation has become a standard technique in advanced integrated circuit manufacturing. There are several unique features of ion implantation compared to thermal dopant deposition. Most important is the excellent doping profile control over a wide range of doses. Moreover, ion implantation is compatible with most of the manufacturing steps for integrated circuits, allowing applications which are not possible with thermal dopant deposition.

Keywords

Phosphorus Furnace Dioxide Arsenic Boron 

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Copyright information

© Springer-Verlag Berlin Heidelberg 1983

Authors and Affiliations

  • D. Widmann
    • 1
  • U. Schwabe
    • 1
  1. 1.Siemens AG ZFEME 4München 83Germany

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