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Ion Implantation: Equipment and Techniques pp 196–213Cite as

Wafer Cooling and Photoresist Masking Problems in Ion Implantation

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Part of the book series: Springer Series in Electrophysics ((SSEP,volume 11))

Abstract

A review of wafer cooling considerations in ion implantation systems is given, with emphasis on figures of merit for the various schemes. Estimates of maximum wafer temperature are determined for practical cases of interest, where negligible heat transfer, radiation cooling, or conduction cooling takes place. Modeled and measured wafer temperatures are presented for both one wafer at a time X-Y scanning and large batch pre-dep systems. Problems with the use of photoresist masking at high dose levels and high beam powers include degradation of photoresist, outgassing in the implanter, and difficulty in stripping ion implanted photoresist. A simple model for photoresist damage relates some of these effects to the implant parameters (ion, energy and dose) through the width of a carbonized region which is formed as a result of damage to the photoresist.

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Author information

Authors and Affiliations

  1. Motorola MOS Group/Advanced Product R&D Labs, Mesa, AZ, 85202, USA

    T. C. Smith

Authors
  1. T. C. Smith
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Editor information

Editors and Affiliations

  1. Fraunhofer-Institut für Festkörpertechnologie, Paul-Gerhardt-Allee 42, D-8000, München 60, Germany

    Heiner Ryssel

  2. Siemens AG, Balanstraße 73, D-8000, München 80, Germany

    Hans Glawischnig

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© 1983 Springer-Verlag Berlin Heidelberg

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Smith, T.C. (1983). Wafer Cooling and Photoresist Masking Problems in Ion Implantation. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation: Equipment and Techniques. Springer Series in Electrophysics, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-69156-0_25

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  • DOI: https://doi.org/10.1007/978-3-642-69156-0_25

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-69158-4

  • Online ISBN: 978-3-642-69156-0

  • eBook Packages: Springer Book Archive

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