Abstract
A knowledge of implantation/diffusion depth profiles, for instance after subsequent oxidations or annealing steps, is of major interest in semiconductor device development and production. Secondary ion mass spectrometry (SIMS) is a technique for depth profiling down to the ppb level. Its potential strength also includes identification of the chemical nature of impurities in bulk material or epitaxial layers at concentration levels down to 1013 atoms/cm3
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
K. Wittmaack: Nucl. Instr. Meth. 168, 343 (1980)
K. Wittmaack: J. Appi. Phys. 12, 149 (1977)
K. Wittmaack: Appi. Phys. Lett. 37, 285 (1980)
J.B. CI egg: Surf. Interface Anal. 2, 91 (1980)
J.B. CI egg et al.: J. Appi. Phys. 52, 1110 (1981)
To be published
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1982 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Maul, J.L., Frenzel, H. (1982). The IONMICROPROBE A-DIDA 3000-30 for Dopant Depth Profiling and Impurity Bulk Analysis. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation Techniques. Springer Series in Electrophysics, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68779-2_16
Download citation
DOI: https://doi.org/10.1007/978-3-642-68779-2_16
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-68781-5
Online ISBN: 978-3-642-68779-2
eBook Packages: Springer Book Archive