Abstract
This chapter describes aspects of ion implantation damage which are important for Si process technology. Primary damage consists of atomic displacements and amorphization of Si (except for B implantation). Annealing restores crystallinity and induces electrical activation of implanted dopant ions. It can also cause the formation of residual defects with well-defined crystallographic nature, for example stacking faults and dislocation loops. During prolonged annealing these defects change their sizes and configurations in response to climb forces. The climb forces are related to indiffusion of the implanted profile and to surface oxidation. Residual dislocations also respond to mechanical stresses which arise from the geometries of masking patterns used for defining active device areas.
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Mader, S. (1982). Annealing and Residual Damage. In: Ryssel, H., Glawischnig, H. (eds) Ion Implantation Techniques. Springer Series in Electrophysics, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68779-2_11
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DOI: https://doi.org/10.1007/978-3-642-68779-2_11
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