Abstract
The rate of reaction of a solution with a solid surface can depend distinctly on the crystallographic orientation of the reacting surfaces. This rate dependence is the basis of “etching”, which is then understood as the intentional utilization of specific chemical attack in order to reveal crystal symmetries and lattice defects.
This subtitle is borrowed from the book “The Art and Science of Growing Crystals” by J. J. Gilmanl). It is meant as a reference to a fine piece of work which considerably boosted materials science
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Heimann, R.B. (1982). Principles of Chemical Etching — The Art and Science of Etching Crystals. In: Grabmaier, J. (eds) Silicon Chemical Etching. Crystals, vol 8. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68765-5_3
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