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Laser-Induced Crystallization in Ge Films and Multilayered Al-Sb Films

  • L. Baufay
  • M. Failly-Lovato
  • R. Andrew
  • M. C. Joliet
  • L. D. Laude
  • A. Pigeolet
  • M. Wautelet
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 7)

Abstract

In recent years laser annealing has emerged as a powerful method for thin film crystallization (1). In the present work, this technique is applied to the Ge and Al-Sb systems in order to determine the influence of various experimental parameters on the crystallization processes, in particular laser beam inhomogeneties. Results presented here demonstrate that it is possible to control long range crystal growth by means of the spatial distribution of light intensity in the incident laser beam. The choice of Al-Sb is suggested by the remarkably close melting points of the two metals, by the potential application of the compound as a photovoltaic material and by the relative difficulty of its preparation by other means. Aside from the intrinsic interest in the laser processing application the results may also shed light upon the nucleation, fundamentals of laser activated atomic diffusion and crystal growth mechanisms.

Keywords

Laser Annealing Incident Laser Beam Homogeneous Beam Crystal Growth Mechanism Fringe System 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    D. J. Godfrey, C. Hill, Journal de Physique 41, C4 - 79 (1980)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1981

Authors and Affiliations

  • L. Baufay
    • 1
  • M. Failly-Lovato
    • 1
  • R. Andrew
    • 1
  • M. C. Joliet
    • 1
  • L. D. Laude
    • 1
  • A. Pigeolet
    • 1
  • M. Wautelet
    • 1
  1. 1.University of MonsMonsBelgium

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