Laser-Induced Crystallization in Ge Films and Multilayered Al-Sb Films
In recent years laser annealing has emerged as a powerful method for thin film crystallization (1). In the present work, this technique is applied to the Ge and Al-Sb systems in order to determine the influence of various experimental parameters on the crystallization processes, in particular laser beam inhomogeneties. Results presented here demonstrate that it is possible to control long range crystal growth by means of the spatial distribution of light intensity in the incident laser beam. The choice of Al-Sb is suggested by the remarkably close melting points of the two metals, by the potential application of the compound as a photovoltaic material and by the relative difficulty of its preparation by other means. Aside from the intrinsic interest in the laser processing application the results may also shed light upon the nucleation, fundamentals of laser activated atomic diffusion and crystal growth mechanisms.
KeywordsLaser Annealing Incident Laser Beam Homogeneous Beam Crystal Growth Mechanism Fringe System
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