Abstract
Technological improvements have largely cancelled the effects of contaminations but the mechanisms of shorting at high and medium fields have not been understood so well. New experimental evidence is incompatible with existing breakdown theories. Novel electrical testing techniques have given evidence that charge incorporation or charge flux through the dielectric plays an essential role in the deterioration of the insulator. In the absence of a sound theory a model will be discussed assuming gaseous discharges.
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Wolters, D.R. (1981). Breakdown and Wearout Phenomena in SiO2 . In: Schulz, M.J., Pensl, G. (eds) Insulating Films on Semiconductors. Springer Series in Electrophysics, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68247-6_29
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DOI: https://doi.org/10.1007/978-3-642-68247-6_29
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