Modelling of Flat-Band Voltage Shift During Avalanche Injection on MOS Capacitors

  • Massimo V. Fischetti
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 7)


It has been suggested {1} that the creation of donor type electronic states at the Si-SiO2 interface during electron avalanche injection is the mechanism responsible for the “turn around” of the flat band voltage shift ΔVfb observed in Al-gate MOS capacitors at room temperature {2}. In the present work we take (and modify) this idea as a starting point to develop a phenomenological model which explains-on empirical grounds-the observed behaviour of ΔVfb vs. injected charge over a wide range of temperatures (from 77°K to 400°K). We shall consider features that a simple buildup of positive charge does not account for, such as the absence of the “turn around” at temperatures different from room temperature. Hints to construct the simple model are taken from results of observations performed in our laboratories {3} and from results reported in the literature.


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Copyright information

© Springer-Verlag Berlin Heidelberg 1981

Authors and Affiliations

  • Massimo V. Fischetti
    • 1
  1. 1.Physics GroupSGS/ATES Componenti Elettronici S.p.A.MilanoItaly

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