Advertisement

Modelling of Flat-Band Voltage Shift During Avalanche Injection on MOS Capacitors

  • Massimo V. Fischetti
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 7)

Abstract

It has been suggested {1} that the creation of donor type electronic states at the Si-SiO2 interface during electron avalanche injection is the mechanism responsible for the “turn around” of the flat band voltage shift ΔVfb observed in Al-gate MOS capacitors at room temperature {2}. In the present work we take (and modify) this idea as a starting point to develop a phenomenological model which explains-on empirical grounds-the observed behaviour of ΔVfb vs. injected charge over a wide range of temperatures (from 77°K to 400°K). We shall consider features that a simple buildup of positive charge does not account for, such as the absence of the “turn around” at temperatures different from room temperature. Hints to construct the simple model are taken from results of observations performed in our laboratories {3} and from results reported in the literature.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Y. Miura, K. Yamabe, Y. Komiya and Y. Tarui, J. Electrochem. Soc. 127, 191 (1980)CrossRefGoogle Scholar
  2. 2.
    D. R.Young, E. A. Irene, D. J. DiMaria and R. F. De Keersmaecker, J. Appl. Phys. 50, 6366 (1979)CrossRefGoogle Scholar
  3. 3.
    M. V. Fischetti, R. Gastaldi, F. Maggioni and A. Modelli, unpublished resultsGoogle Scholar
  4. 4.
    D. J. Breed, Solid St. Electr. 17, 1229 (1974)CrossRefGoogle Scholar
  5. 5.
    T. H. Ning, J. Appl. Phys. 49, 5997 (1978)CrossRefGoogle Scholar
  6. 6.
    C. M. Svensson, in Proceedings of the International Conference on the Physics of SiO2 and Its Interfaces (Pergamon, New York 1978) p. 328Google Scholar
  7. 7.
    R. B. Laughlin, J. D. Joannopoulos and D. J. Chadi, in Proceedings of the International Conference on the Physics of SiO2 and Its Interfaces (Pergamon, New York, 1978) p. 321Google Scholar
  8. 8.
    K. O. Jeppson and C. M. Svensson, J. Appl. Phys. 48, 2004 (1977)CrossRefGoogle Scholar
  9. 9.
    R. B. Fair and R. C. Sun, IEEE Trans. Electron Device ED 28, 83 (1981)CrossRefGoogle Scholar
  10. 10.
    Z. A. Weinberg, D. R. Young, D. J. DiMaria and G. W. Rubloff, J. Appl. Phys. 50, 5757 (1979)CrossRefGoogle Scholar
  11. 11.
    Z. A. Weinberg and G. W. Rubloff, Appl. Phys. Lett. 32, 184 (1978)CrossRefGoogle Scholar
  12. 12.
    T. H. Ning, J. Appl. Phys. 47, 3203 (1976)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1981

Authors and Affiliations

  • Massimo V. Fischetti
    • 1
  1. 1.Physics GroupSGS/ATES Componenti Elettronici S.p.A.MilanoItaly

Personalised recommendations