A Study of MIS Structures Prepared Under Ultra-High-Vacuum Conditions

  • M. Commandré
  • J. Derrien
  • A. Cros
  • F. Salvan
  • G. Sarrabayrouse
  • J. Buxo
Conference paper
Part of the Springer Series in Electrophysics book series (SSEP, volume 7)

Abstract

In present semiconductor device technology (MIS, MISS …) the Si-SiO2 interface is a vital part. The realization of very thin and pure oxide films (less than 30 Å for some applications) is very difficult to control under classical ways due to
  1. i)

    the presence of a native and unknown composition oxide film at the semiconductor surface extending sometimes to > 10 Å,

     
  2. ii)

    the very rapid growth rate of the early stages of oxidation in the oxygen pressure range usually used (several Torrs to atmosphere).

     

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References

  1. 1.
    See for example C.R. Helms, N.M. Johnson, S.A. Schwarz and W.E. Spicer, J. Appl. Phys. 50, 7007 (1979) and references cited therein.CrossRefGoogle Scholar
  2. 2.
    See for example N. Lieske and R. Hezel, Thin Solid Films 61, 197 (1979) and references cited therein.Google Scholar
  3. 3.
    M.P. Seah and W.A. Dench, NPL Report. Chemic. 82 April 1978, U.K.Google Scholar
  4. 4.
    Y. Kamigaki and Y. Itoh, J. Appl. Phys. 48, 2891 (1977).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Berlin Heidelberg 1981

Authors and Affiliations

  • M. Commandré
    • 1
  • J. Derrien
    • 1
  • A. Cros
    • 1
  • F. Salvan
    • 1
  • G. Sarrabayrouse
    • 2
  • J. Buxo
    • 2
  1. 1.Faculté des Sciences de LuminyDépartement de PhysiqueMarseille Cedex 9France
  2. 2.LAASToulouse CedexFrance

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