Abstract
In present semiconductor device technology (MIS, MISS …) the Si-SiO2 interface is a vital part. The realization of very thin and pure oxide films (less than 30 Å for some applications) is very difficult to control under classical ways due to
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i)
the presence of a native and unknown composition oxide film at the semiconductor surface extending sometimes to > 10 Å,
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ii)
the very rapid growth rate of the early stages of oxidation in the oxygen pressure range usually used (several Torrs to atmosphere).
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References
See for example C.R. Helms, N.M. Johnson, S.A. Schwarz and W.E. Spicer, J. Appl. Phys. 50, 7007 (1979) and references cited therein.
See for example N. Lieske and R. Hezel, Thin Solid Films 61, 197 (1979) and references cited therein.
M.P. Seah and W.A. Dench, NPL Report. Chemic. 82 April 1978, U.K.
Y. Kamigaki and Y. Itoh, J. Appl. Phys. 48, 2891 (1977).
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© 1981 Springer-Verlag Berlin Heidelberg
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Commandré, M., Derrien, J., Cros, A., Salvan, F., Sarrabayrouse, G., Buxo, J. (1981). A Study of MIS Structures Prepared Under Ultra-High-Vacuum Conditions. In: Schulz, M.J., Pensl, G. (eds) Insulating Films on Semiconductors. Springer Series in Electrophysics, vol 7. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-68247-6_10
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DOI: https://doi.org/10.1007/978-3-642-68247-6_10
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