Characterization of Localized States in β-Rhombohedral Boron

  • M. Prudenziati

Abstract

Boron is an elemental semiconductor with very fascinating properties, namely low density, high melting point (2300°C), a hardness close to that of diamond and remarkable mechanical and nuclear properties.

Keywords

Anisotropy Sulphide Cadmium Recombination Boron 

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References

  1. ADIROVICH, É.I., GOL’DSHTEIN, L.M.: Photoconductivity of boron single crystals and films. Sov. Phys. Semiconduct. 3, 196 (1969)Google Scholar
  2. ADIROVICH, É.I., BENDERSKII, V.A., BRIKENSHTEIN, V.KH., KOROSTELEV, YU.A.: Investigation of the EPR signals observed during the illumination of boron single crystals. Sov. Phys. Semicond. 5, 13 (1971)Google Scholar
  3. ANISIMOV, B.B., DZHAMAGIDZE, SH.Z., SHVANGIRADZE, R.R.: Investigation of the effects caused by preliminary illumination of boron crystals. Sov. Phys. Semiconduct. 5, 991 (1971)Google Scholar
  4. ANISIMOV, B.B., DZHAMAGIDZE, SH.Z., SHVANGIRADZE, R.R.: Anomalous behavior of the electrical resistance and optical absorption of β-boron. Sov. Phys. Semiconduct. 6, 1873 (1973)Google Scholar
  5. AUSTIN, I.G., MOTT, N.F.: Polarons in crystalline and non-crystalline materials. Adv. Phys. 18, 41 (1969)CrossRefGoogle Scholar
  6. AVDEENKO, B.K., GOLIKOVA, O.A., ZHUBANOV, M.ZH., KISKACHI, A.YU., MATVEEV, V.N.: Conductivity of boron as a function of frequency and temperature. Sov, Phys. Solid State. 10, 2007 (1969)Google Scholar
  7. BEREZIN, A.A., GOLIKOVA, O.A., ZAITSEV, V.K: Nature of hopping conduction in β-rhombohedral boron. Sov. Phys. Solid State. 15, 1237 (1973a)Google Scholar
  8. BEREZIN, A.A., GOLIKOVA, O.A., KAZANIN, M.M., TKALENKO, E.N., ZAITSEV, V.K.: Studies of a conductivity mechanism of β-rhombohedral boron in a strong electric field. Phys. Stat. Sol (a). 20, 447 (1973b)CrossRefGoogle Scholar
  9. BORCHERT, W., DIETZ, W., HERMANN, H.: Untersuchungen über die Halbleitereigen schaften von Bor. Z. Ang. Phys, 19, 485 (1965)Google Scholar
  10. BOSMANN, A.J., CREVECOEUR, C.: Mechanism of the electrical conduction in Lidoped NiO. Phys. Rev. 144, 763 (1965)CrossRefGoogle Scholar
  11. BRODSKY, M.H., GAMBINO, R.J.: Electrical conduction in evaporated amorphous silicon films. J. Non-Cryst. Solids, 8–10, 739 (1972)Google Scholar
  12. BRUNGS, R.A., JACOBSMEYER, V.P.: Activation energies of monocrystalline β-rhombohedral boron. J. Phys. Chem. Solids, 25, 701 (1964)CrossRefGoogle Scholar
  13. BUBE, R.H.: Photoconductivity in Solids. New York: Wiley and Sons 1960Google Scholar
  14. BUBE, R.H.: Photoelectronic Materials and Devices. Larach Ed, p. 100. Princeton: Van Nostrand (1965)Google Scholar
  15. DIETZ, W., HELMBERGER, H.: Boron Semiconductor Devices. In: Boron Vol, II, p. 301, (G.K. Gaulé, ed.). New York: Plenum Press 1965Google Scholar
  16. DIETZ, W., HERMANN, H.: Investigations on the Conduction Mechanism in Boron Single Crystals. In: Boron Vol. III, p. 195, (T. Niemyski, ed.). Warsaw: Pol. Sci. Publ. 1970Google Scholar
  17. DZHAMAGIDZE, SH. Z., MAL’TSEV, Yu.A., SHVANGIRADZE, R.R.,: Investigation of the electrical properties of boron. Sov, Phys. Semiconduct. 2, 320 (1968)Google Scholar
  18. DZHAMAGIDZE, Z., MAL’TSEV, A., SHVANGIRADZE, R.R.: Trapping levels and tempe rature dependence of carrier mobility in boron. Sov. Phys, Semiconduct, 3, 80 (1969)Google Scholar
  19. DZHAMAGIDZE, SH. Z., SHVANGIRADZE, R.R., GVILAVA, M.F.: Investigation of the optical absorption of boron. Sov. Phys, Semiconduct, 2, 316 (1968)Google Scholar
  20. EAGLES, D.M.: Optical absorption and recombination radiation in semiconductors due to transition between hydrogen-like acceptor impurity levels and the conduction band. J. Phys. Chem. Solids. 16, 76 (1960)CrossRefGoogle Scholar
  21. FRITZSCHE, H.: Electronic phenomena in amorphous semiconductors. Ann. Rev, Mat. Science. 2, 697 (1972)CrossRefGoogle Scholar
  22. GAULé, G.K., BRESLIN, J.T., PATTY, R.R.: Trap dominated electrical and optical effects in crystalline boron. In: Boron Vol. II, p. 169 (G.K. Gaulé, ed.). New York: Plenum Press 1965Google Scholar
  23. GAULé, G.K., ROSS, R.L., BLOOM, J.L.: B10/B11 Thermistor pairs and their application. In: Boron Vol.11, p. 317 (G.K. Gaulé, ed.). New York: Plenum Press 1965Google Scholar
  24. GEIST, D.: Electron paramagnetic resonance, electrical conductivity and impurity diffusion in doped boron. In: Boron Vol. II, p. 203 (G.K. Gaulé, ed.). New York: Plenum Press 1965Google Scholar
  25. GEIST, D.: The mechanism and quantitative description of the photoconductivity and photo-EPR in β-rhombohedral boron single crystals at 77°K, Z. Natur. 28 a, 953 (1973)Google Scholar
  26. GEIST, D., MEYER, J.: Carrier Mobility in High Purity Boron Single Crystals. Proc. 10th Int. Conf. Phys. Semic. Cambridge 1970Google Scholar
  27. GEWINNER, G., KUBLER, L., KOULMANN, J.J., JAéGLé, A.: EPR investigation of para magnetic centres in β-rhombohedral boron. Phys. Stat. Sol, (b)., 59, 395 (1973)CrossRefGoogle Scholar
  28. GOLIKOVA, O.A., KISKACHI, A.YU., KHOMIDOV, T.,: Electrical properties of β-rhombohedral boron at high temperatures. Sov. Phys. Semiconduct. 4, 683 (1970)Google Scholar
  29. GOLIKOVA, O.A., NIKITIN, E.N., TKALENKO, É.N.: Electrical properties of doped boron. Sov. Phys. Semiconductors., 4, 1193 (1971)Google Scholar
  30. GOLIN, S.: Polarization conductivity in p-type germanium. Phys. Rev, 132, 178 (1963)CrossRefGoogle Scholar
  31. HARTKE, J.L.: Drift mobilities of electrons and holes and space-charge-limited currents in amorphous selenium films. Phys, Rev. 125, 1177 (1962)CrossRefGoogle Scholar
  32. HILL, R.M.: Hopping conduction in amorphous solids, Phyl. Magazine XXIV. 1307 (1971)CrossRefGoogle Scholar
  33. JAUMANN, J., WERHEIT, H.: Optische und photoelektrische Eigenschaften von β-hombohedrischem Bor. Phys. Stat. Sol. 33, 587 (1969)CrossRefGoogle Scholar
  34. KLEINHENZ, K., RUNOW, P.: Herstellung dünner Borfolien und Elektronenmikroskopische Beobachtung ihrer Baufehler. Phys. Stat. Sol. 29, 627 (1968)CrossRefGoogle Scholar
  35. KUBLER, L., GEWINNER, G., KOULMANN, J.J., JAéGLé, A.: Magnetic susceptibility of pure boron. Phys. Stat. Sol. (b). 60, 117 (1973)CrossRefGoogle Scholar
  36. LAMPERT, A.: Simplified theory of space-charge-limited currents in an insulator with traps. Phys. Rev. 103, 1648 (1956)CrossRefGoogle Scholar
  37. MAJNI, G., PRUDENZIATI, M.: Thermoelectric power in crystalline boron. Phys. Stat. Sol. (a). 5, K129 (1971)CrossRefGoogle Scholar
  38. MARTINI, M., MAYER, J.W., ZANIO, K.R.: Applied Solid States Science Vol. 3, (R. Wolfe, ed.). New York: Academic Press 1972Google Scholar
  39. MOTT, N.F.: Conduction in non-crystalline systems VII Non-Ohmic behaviour and switching. Phyl. Mag. 24, 911 (1971)CrossRefGoogle Scholar
  40. MOTT, N.F., DAVIS, E.A.: Electronic Processes in Non-Crystalline Materials. Oxford: Clarendon Press 1971Google Scholar
  41. NADOLNY, A.J.: Electron Trapping in β-Rhombohedral Boron. IV Int. Conf. on Boron, Tbilissi, Oct. 1972Google Scholar
  42. NADOLNY, A.J., OSTROWSKI, J.W., Przegalinska-Mieskowska, M.Z.: Kinetics of photoconductivity in boron. Phys. Stat. Sol. 16, K133 (1966)CrossRefGoogle Scholar
  43. NEFT, W., SEILER, K.: Semiconductor properties of boron. In: Boron Vol. II, p. 143, (G.K. Gaulé, ed.). New York: Plenum Press 1965Google Scholar
  44. NICHOLAS, K.H., WOODS, J.: The evaluation of electron trapping parameters from conductivity glow curves in cadmium sulphide. Brit, J. Appl. Phys, 15, 783 (1964)CrossRefGoogle Scholar
  45. PRUDENZIATI, M., LANZI, A., MAJNI, G., MALAVASI, G.: Switching effect in β-rhombo-hedral boron. Phys. Stat. Sol. (a). 18, 651 (1973)CrossRefGoogle Scholar
  46. PRUDENZIATI, M., MAJNI, G.: Boron thermistors for high temperature measurements. IEEE Trans. Ind. Elec. Control Instrum. IECI 20, 30 (1973)CrossRefGoogle Scholar
  47. PRUDENZIATI, M., MAJNI, G., ALBERIGI-QUARANTA, A.: Determination of trapping centers in β-rhombohedral boron. J. Phys. Chem. Solids, 33, 245 (1972)CrossRefGoogle Scholar
  48. SHAW, W.C., HUDSON, D.E., DANIELSON, G.C.: Electrical properties of boron single crystals. Phys. Rev. 107, 419 (1957)CrossRefGoogle Scholar
  49. SHKLOVSKII, B.I.: Hopping conduction in semiconductors subjected to a strong electric field. Sov. Phys. Semiconduct. 6, 1964 (1973)Google Scholar
  50. SOSNOWSKI, L.: The present state of research on boron. In: Boron Vol. III, p. 15, (T. Niemyski, ed.). Warsaw: Pol. Sci. Publ. 1970Google Scholar
  51. SOSNOWSKI, L., ZAREBA, A.: Influence of magnetic field on conductivity due to electron tunnelling between localized states. Phys. Stat. Sol. (b). 47, 63 (1971)CrossRefGoogle Scholar
  52. SPEAR, W.E.: Drift mobility techniques for the study of electrical transport properties in insulating solids. J. Non-Cryst. Solids. 1, 197 (1969)CrossRefGoogle Scholar
  53. WERHEIT, H.: Optical and photoelectrical properties of β-rhombohedral boron. Phys. Stat. Sol. 39, 109 (1970)CrossRefGoogle Scholar
  54. WERHEIT, H., LEIS, H.G.: On the conductivity mechanism of β-rhombohedral boron. Phys. Stat. Sol. 41, 247 (1970)CrossRefGoogle Scholar
  55. WERHEIT, H., HAUSEN, A., BINNENBRUCK, H.: Optical anisotropy of β-rhombohedral boron (from 0.4 to 16μ). Phys. Stat. Sol, (b). 51, 115 (1972)CrossRefGoogle Scholar
  56. WERHEIT, H., RUNOW, P., LEIS, H.G.: On boron-suboxide surface layers and surface states of β-rhombohedral boron. Phys. Stat, Sol. (a). 2, K125 (1970)CrossRefGoogle Scholar
  57. ZAREBA, A.: On thermally stimulated conductivity of boron. Phys. Stat. Sol. (a). 5, K121 (1971)CrossRefGoogle Scholar
  58. ZAREBA, A., LUBOMIRSKA, A.: Thermally stimulated current in boron. Phys. Stat. Sol. 34, K41 (1969)CrossRefGoogle Scholar

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© Springer-Verlag Berlin Heidelberg 1977

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  • M. Prudenziati

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