Abstract
Recently, it has been shown that high powered pulses of laser radiation can be used to anneal ion implanted silicon [1]. Changes in the implant dopant profile as a result of laser annealing provides fundamental insight into the laser annealing mechanism. Consequently, we have used secondary ion mass spectrometry (SIMS) to investigate the effect of laser annealing on the distribution of ion implanted and surface deposited boron in single crystal silicon.
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References
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© 1979 Springer-Verlag New York
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Christie, W.H., Warmack, R.J., White, C.W., Narayan, J. (1979). Laser Induced Redistribution of Ion Implanted and Surface Deposited B in Silicon: A SIMS Study. In: Benninghoven, A., Evans, C.A., Powell, R.A., Shimizu, R., Storms, H.A. (eds) Secondary Ion Mass Spectrometry SIMS II. Springer Series in Chemical Physics, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-61871-0_30
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DOI: https://doi.org/10.1007/978-3-642-61871-0_30
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