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Secondary Ion Mass Spectrometry SIMS II pp 80–84Cite as

Quantitation of SIMS for Semiconductor Processing Technology

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Part of the book series: Springer Series in Chemical Physics ((CHEMICAL,volume 9))

Abstract

The quantitation of the depth and concentration scales of SIMS measurements for semiconductor device processing technology is discussed. Using ion implantation and MeV 4He backscattering, one is able to provide absolute depth and concentration scales for many important impurities in materials such as silicon dioxide, silicon and gallium arsenide. This paper will discuss how the use of ion implanation, Rutherford backscattering and SIMS can provide measurement capabilities for semiconductor processings heretofore unavailable. Recent results and earlier examples will be presented.

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References

  1. J.F. Gibbons, W.S. Johnson, and S.W. Mylroie, Projected Range Statistics in Semiconductors (Dowden, Hutchinson and Ross, Stroudsburg, PA, 1975).

    Google Scholar 

  2. M.Y. Tsai, B.G. Streetman, P. Williams and C.A. Evans, Jr., Appl. Phys. Lett. 32, 144 (1978).

    Article  ADS  Google Scholar 

  3. J.W. Mayer and E. Rimini, Ion Beam Handbook for Materials Analysis, Sec.2, (Academic Press, New York, 1977).

    Google Scholar 

  4. A. Lidow, J.F. Gibbons, V.R. Deline and C.A. Evans, Jr., Appl. Phys. Lett. 32, 15 (1978).

    Article  ADS  Google Scholar 

  5. A. Gat, J.F. Gibbons, T.J. Magee, J. Peng, V.R. Deline, P. Williams and C.A. Evans, Jr., Appl. Phys. Lett. 32, 276 (1978).

    Article  ADS  Google Scholar 

  6. C.A. Evans, Jr. and P. Williams, Appl. Phys. Lett. 30, 559 (1977).

    Article  ADS  Google Scholar 

  7. J.F. Gibbons, J.L. Regolini, A. Lietoila, T.W. Sigmon and others, Jour. Appl. Phys. (to be published).

    Google Scholar 

  8. T.W. Sigmon, V.R. Deline, C.A. Evans, Jr., and W.M. Katz, submitted to Jour. Electrochem.

    Google Scholar 

  9. C.A. Evans, Jr., V.R. Deline, T.W. Sigmon, A. Lidow, Appl. Phys. Lett. (to be published).

    Google Scholar 

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Author information

Authors and Affiliations

  1. Stanford Electronics Laboratories, Stanford, California, 94305, USA

    T. W. Sigmon

Authors
  1. T. W. Sigmon
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Editor information

Editors and Affiliations

  1. Physikalisches Institut der Universität Münster, Germany

    A. Benninghoven

  2. Charles Evans & Associates, San Mateo, CA, 94402, USA

    C. A. Evans Jr.

  3. Varian Associates, Palo Alto, CA, 94303, USA

    R. A. Powell

  4. Osaka University, Osaka, Japan

    R. Shimizu

  5. General Electric Vallecitos Nuclear Center, Pleasanton, CA, 94566, USA

    H. A. Storms

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© 1979 Springer-Verlag New York

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Sigmon, T.W. (1979). Quantitation of SIMS for Semiconductor Processing Technology. In: Benninghoven, A., Evans, C.A., Powell, R.A., Shimizu, R., Storms, H.A. (eds) Secondary Ion Mass Spectrometry SIMS II. Springer Series in Chemical Physics, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-61871-0_24

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  • DOI: https://doi.org/10.1007/978-3-642-61871-0_24

  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-642-61873-4

  • Online ISBN: 978-3-642-61871-0

  • eBook Packages: Springer Book Archive

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