Abstract
Because of its sensitivity, the potential applications of secondary ion mass spectrometry (SIMS) are much greater than the problems to which it is currently applied. Its potential has not been achieved because the mechanisms by which atoms are sputtered as ions are not understood, even though a relationship between the chemical bonding and the ionization probability has been well documented. There has been some work, however, which suggests a relationship between the ionization probability and the electron density of states at the surface [1–5]. Ion yield measurements, in themselves, do not give sufficient information to test various correlations. Measurements of the energy distributions of sputtered ions give much more information on the ionization/neutralization process. I have made these measurements and also have obtained the energy distributions of neutral sputtered atoms [6,7]. This allowed the determination of the spectral ionization probability, i.e., the energy dependence of the ionization probability. By examining clean Ti, Ni and Cu and these same surfaces with some oxygen coverage, it has been possible to assess the significance of the electron density of states.
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Lundquist, T.R. (1979). Correlation Between the Spectral Ionization Probability of Sputtered Atoms and the Electron Density of States. In: Benninghoven, A., Evans, C.A., Powell, R.A., Shimizu, R., Storms, H.A. (eds) Secondary Ion Mass Spectrometry SIMS II. Springer Series in Chemical Physics, vol 9. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-61871-0_10
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